IRFR220, IRFU220, SiHFR220, SiHFU220
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
D
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR220, SiHFR220)
• Straight lead (IRFU220, SiHFU220)
DPAK
(TO-252)
IPAK
(TO-251)
D
D
G
• Available in tape and reel
Available
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
S
G
D
S
G
N-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
PRODUCT SUMMARY
VDS (V)
200
0.80
14
RDS(on) (Ω)
VGS = 10 V
Qg max. (nC)
Qgs (nC)
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface-mount applications.
3.0
Qgd (nC)
7.9
Configuration
Single
ORDERING INFORMATION
PACKAGE
DPAK (TO-252)
SiHFR220-GE3
IRFR220PbF
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
SiHFU220-GE3
IRFU220PbF
-
Lead (Pb)-free and
halogen-free
SiHFR220TRL-GE3
IRFR220TRLPbF a
-
-
Lead (Pb)-free
IRFR220TRPbF a
IRFR220TRRPbF a
-
Lead (Pb)-free and
halogen-free
IRFR220PbF-BE3 b IRFR220TRLPbF-BE3 ab IRFR220TRPbF-BE3 ab
Notes
a. See device orientation
b. “-BE3” denotes alternate manufacturing location
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
200
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
4.8
Continuous drain current
VGS at 10 V
ID
TC = 100 °C
3.0
A
Pulsed drain currenta
IDM
19
Linear derating Factor
0.33
0.020
161
W/°C
Linear derating Factor (PCB Mount) e
Single pulse avalanche energy b
Repetitive avalanche current a
EAS
IAR
mJ
A
4.8
Repetitive avalanche energy a
EAR
4.2
mJ
Maximum power dissipation
T
C = 25 °C
42
PD
W
V/ns
°C
Maximum power dissipation (PCB mount) e
Peak diode recovery dV/dt c
TA = 25 °C
2.5
dV/dt
5.0
Operating junction and storage temperaturerange
Soldering recommendations (peak temperature) d
TJ, Tstg
-55 to +150
260
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 4.8 A (see fig. 12)
c. ISD ≤ 5.2 A, dI/dt ≤ 95 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
S21-0771-Rev. G, 19-Jul-2021
Document Number: 91270
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000