Datasheet > IRFR220, IRFU220, SiHFR220, SiHFU220

IRFR220, IRFU220, SiHFR220, SiHFU220

更新时间： 2024-11-06 14:54:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	809K
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Power MOSFET

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IRFR220, IRFU220, SiHFR220, SiHFU220 数据手册

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IRFR220, IRFU220, SiHFR220, SiHFU220

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Surface-mount (IRFR220, SiHFR220)

• Straight lead (IRFU220, SiHFU220)

DPAK

(TO-252)

IPAK

(TO-251)

• Available in tape and reel

Available

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

PRODUCT SUMMARY

V_DS(V)

200

0.80

R_DS(on)(Ω)

V_GS= 10 V

Q_gmax. (nC)

Q_gs(nC)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

3.0

Q_gd(nC)

7.9

Configuration

Single

ORDERING INFORMATION

PACKAGE

DPAK (TO-252)

SiHFR220-GE3

IRFR220PbF

DPAK (TO-252)

IPAK (TO-251)

SiHFU220-GE3

IRFU220PbF

Lead (Pb)-free and

halogen-free

SiHFR220TRL-GE3

IRFR220TRLPbF ^a

Lead (Pb)-free

IRFR220TRPbF ^a

IRFR220TRRPbF ^a

Lead (Pb)-free and

halogen-free

IRFR220PbF-BE3 ^bIRFR220TRLPbF-BE3 ^abIRFR220TRPbF-BE3 ^ab

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

200

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

4.8

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

3.0

Pulsed drain current^a

I_DM

Linear derating Factor

0.33

0.020

161

W/°C

Linear derating Factor (PCB Mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

4.8

Repetitive avalanche energy ^a

E_AR

4.2

Maximum power dissipation

_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

T_A= 25 °C

2.5

dV/dt

5.0

Operating junction and storage temperaturerange

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 14 mH, R_g= 25 Ω, I_AS= 4.8 A (see fig. 12)

c. I_SD≤ 5.2 A, dI/dt ≤ 95 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

S21-0771-Rev. G, 19-Jul-2021

Document Number: 91270

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与IRFR220, IRFU220, SiHFR220, SiHFU220相关器件

型号	品牌	获取价格	描述	数据表
IRFR220A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFR220ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR220ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR220B	FAIRCHILD	获取价格	200V N-Channel MOSFET
IRFR220N	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
IRFR220N	KERSEMI	获取价格	SMPS MOSFET
IRFR220NPBF	KERSEMI	获取价格	SMPS MOSFET
IRFR220NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR220NPBF-TRL	INFINEON	获取价格	暂无描述
IRFR220NTR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5A I(D) \| TO-252AA

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