5秒后页面跳转
IRFR220, IRFU220, SiHFR220, SiHFU220 PDF预览

IRFR220, IRFU220, SiHFR220, SiHFU220

更新时间: 2024-11-05 14:54:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 809K
描述
Power MOSFET

IRFR220, IRFU220, SiHFR220, SiHFU220 数据手册

 浏览型号IRFR220, IRFU220, SiHFR220, SiHFU220的Datasheet PDF文件第2页浏览型号IRFR220, IRFU220, SiHFR220, SiHFU220的Datasheet PDF文件第3页浏览型号IRFR220, IRFU220, SiHFR220, SiHFU220的Datasheet PDF文件第4页浏览型号IRFR220, IRFU220, SiHFR220, SiHFU220的Datasheet PDF文件第5页浏览型号IRFR220, IRFU220, SiHFR220, SiHFU220的Datasheet PDF文件第6页浏览型号IRFR220, IRFU220, SiHFR220, SiHFU220的Datasheet PDF文件第7页 
IRFR220, IRFU220, SiHFR220, SiHFU220  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
FEATURES  
D
• Dynamic dV/dt rating  
• Repetitive avalanche rated  
• Surface-mount (IRFR220, SiHFR220)  
• Straight lead (IRFU220, SiHFU220)  
DPAK  
(TO-252)  
IPAK  
(TO-251)  
D
D
G
• Available in tape and reel  
Available  
• Fast switching  
• Ease of paralleling  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
S
G
D
S
G
N-Channel MOSFET  
DESCRIPTION  
Third generation power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
PRODUCT SUMMARY  
VDS (V)  
200  
0.80  
14  
RDS(on) (Ω)  
VGS = 10 V  
Qg max. (nC)  
Qgs (nC)  
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
lead version (IRFU, SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surface-mount applications.  
3.0  
Qgd (nC)  
7.9  
Configuration  
Single  
ORDERING INFORMATION  
PACKAGE  
DPAK (TO-252)  
SiHFR220-GE3  
IRFR220PbF  
DPAK (TO-252)  
DPAK (TO-252)  
DPAK (TO-252)  
IPAK (TO-251)  
SiHFU220-GE3  
IRFU220PbF  
-
Lead (Pb)-free and  
halogen-free  
SiHFR220TRL-GE3  
IRFR220TRLPbF a  
-
-
Lead (Pb)-free  
IRFR220TRPbF a  
IRFR220TRRPbF a  
-
Lead (Pb)-free and  
halogen-free  
IRFR220PbF-BE3 b IRFR220TRLPbF-BE3 ab IRFR220TRPbF-BE3 ab  
Notes  
a. See device orientation  
b. “-BE3” denotes alternate manufacturing location  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
200  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
4.8  
Continuous drain current  
VGS at 10 V  
ID  
TC = 100 °C  
3.0  
A
Pulsed drain currenta  
IDM  
19  
Linear derating Factor  
0.33  
0.020  
161  
W/°C  
Linear derating Factor (PCB Mount) e  
Single pulse avalanche energy b  
Repetitive avalanche current a  
EAS  
IAR  
mJ  
A
4.8  
Repetitive avalanche energy a  
EAR  
4.2  
mJ  
Maximum power dissipation  
T
C = 25 °C  
42  
PD  
W
V/ns  
°C  
Maximum power dissipation (PCB mount) e  
Peak diode recovery dV/dt c  
TA = 25 °C  
2.5  
dV/dt  
5.0  
Operating junction and storage temperaturerange  
Soldering recommendations (peak temperature) d  
TJ, Tstg  
-55 to +150  
260  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)  
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 4.8 A (see fig. 12)  
c. ISD 5.2 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C  
d. 1.6 mm from case  
S21-0771-Rev. G, 19-Jul-2021  
Document Number: 91270  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与IRFR220, IRFU220, SiHFR220, SiHFU220相关器件

型号 品牌 获取价格 描述 数据表
IRFR220A FAIRCHILD

获取价格

Advanced Power MOSFET
IRFR220ATF FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR220ATM FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR220B FAIRCHILD

获取价格

200V N-Channel MOSFET
IRFR220N INFINEON

获取价格

Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
IRFR220N KERSEMI

获取价格

SMPS MOSFET
IRFR220NPBF KERSEMI

获取价格

SMPS MOSFET
IRFR220NPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFR220NPBF-TRL INFINEON

获取价格

暂无描述
IRFR220NTR INFINEON

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA