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IRFR220 PDF预览

IRFR220

更新时间: 2024-11-03 22:51:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 59K
描述
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs

IRFR220 数据手册

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IRFR220, IRFU220  
Data Sheet  
July 1999  
File Number 2410.2  
4.6A, 200V, 0.800 Ohm, N-Channel Power  
MOSFETs  
Features  
• 4.6A, 200V  
These are N-Channel enhancement mode silicon gate  
power field effect transistors. They are advanced power  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching  
convertors, motor drivers, relay drivers, and drivers for high  
power bipolar switching transistors requiring high speed and  
low gate drive power. These types can be operated directly  
from integrated circuits.  
• r  
= 0.800  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA9600.  
Ordering Information  
Symbol  
PART NUMBER  
IRFR220  
IRFU220  
PACKAGE  
TO-252AA  
TO-251AA  
BRAND  
D
IFR220  
IFU220  
G
NOTE: When ordering, use the entire part number.  
S
Packaging  
JEDEC TO-251AA  
JEDEC TO-252AA  
SOURCE  
DRAIN  
GATE  
GATE  
DRAIN  
(FLANGE)  
DRAIN  
SOURCE  
DRAIN (FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-389  

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