Datasheet > IRFR214TRRA

IRFR214TRRA

更新时间： 2024-11-04 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	4263K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFR214TRRA 数据手册

IRFR214, IRFU214, SiHFR214, SiHFU214

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

250

Available

• Repetitive Avalanche Rated

RoHS*

• Surface Mount (IRFR9210/SiHFR9210)

COMPLIANT

R_DS(on)(Ω)

V_GS= 10 V

2.0

Q_g(Max.) (nC)

8.2

1.8

• Straight Lead (IRFU9210/SiHFU9210)

• Available in Tape and Reel

• Fast Switching

_gs(nC)

_gd(nC)

4.5

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D-PAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR214PbF

SiHFR214-E3

IRFR214

DPAK (TO-252)

IRFR214TRLPbF^a

SiHFR214TL-E3^a

DPAK (TO-252)

IRFR214TRPbF^a

SiHFR214T-E3^a

IRFR214TR^a

DPAK (TO-252)

IPAK (TO-251)

IRFU214PbF

SiHFU214-E3

IRFU214

Lead (Pb)-free

IRFR214TRR^a

SiHFR214TR^a

SnPb

SiHFR214

SiHFR214T^a

SiHFU214

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

250

V_GS

T_C= 25 °C

T_C=100°C

2.2

Continuous Drain Current

V_GSat 10 V

I_D

1.4

Pulsed Drain Current^a

I_DM

8.8

Linear Derating Factor

0.20

0.020

190

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

2.2

Repetitive Avalanche Energy^a

E_AR

2.5

Maximum Power Dissipation

T_C= 25 °C

P_D

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_A= 25 °C

P_D

2.5

dV/dt

T_J, T_stg

4.8

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

260^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, Starting T_J= 25 °C, L = 62 mH, R_G= 25 Ω, I_AS= 2.2 A (see fig. 12).

c. I_SD≤ 2.2 A, dI/dt ≤ 65 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1” square PCB (FR-4 or G-10 Material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与IRFR214TRRA相关器件

型号	品牌	获取价格	描述	数据表
IRFR214TRRPBF	INFINEON	获取价格	暂无描述
IRFR214TRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFR21N60L	INFINEON	获取价格	SMPS MOSFET
IRFR220	INTERSIL	获取价格	4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
IRFR220	KERSEMI	获取价格	Power MOSFET
IRFR220	VISHAY	获取价格	Power MOSFET
IRFR220, IRFU220, SiHFR220, SiHFU220	VISHAY	获取价格	Power MOSFET
IRFR220A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFR220ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR220ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

与IRFR214TRRA相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

33
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR214TRRA

IRFR214TRRA 数据手册

与IRFR214TRRA相关器件

与IRFR214TRRA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR214TRRA

IRFR214TRRA 数据手册

与IRFR214TRRA相关器件

与IRFR214TRRA相关文章

您还可以找

您在本页遇到什么问题？