PD - 94503
SMPS MOSFET
IRFP21N60L
HEXFET® Power MOSFET
Applications
• Zero Voltage Switching SMPS
Trr typ.
VDSS RDS(on) typ.
270m
ID
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
600V
Ω
160ns 21A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
TO-247AC
• Higher Gate voltage threshold offers improved noise immunity.
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Max.
21
Units
A
I
I
I
@ T = 25°C
C
D
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
@ T = 100°C
C
13
84
DM
P
@T = 25°C
Power Dissipation
C
330
W
D
Linear Derating Factor
Gate-to-Source Voltage
2.6
±30
W/°C
V
V
GS
Peak Diode Recovery dv/dt
Operating Junction and
dv/dt
11
V/ns
T
J
-55 to + 150
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
I
D
Continuous Source Current
––– –––
––– –––
––– –––
21
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
84
SM
S
(Body Diode)
p-n junction diode.
V
t
T = 25°C, I = 21A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
1.5
V
SD
T = 25°C, I = 21A
––– 160 240
––– 400 610
ns
rr
J
F
TJ = 125°C, di/dt = 100A/µs
Q
rr
T = 25°C, I = 21A, V = 0V
Reverse Recovery Charge
––– 480 730 nC
––– 1540 2310
J
S
GS
TJ = 125°C, di/dt = 100A/µs
IRRM
T = 25°C
J
Reverse Recovery Current
Forward Turn-On Time
––– 5.3
7.9
A
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
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1
02/18/03