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IRFR214TRLPBF PDF预览

IRFR214TRLPBF

更新时间: 2024-11-04 05:39:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 1743K
描述
Power MOSFET

IRFR214TRLPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:5.07
其他特性:AVALANCHE RATED雪崩能效等级(Eas):190 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):2.2 A
最大漏极电流 (ID):2.2 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):8.8 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFR214TRLPBF 数据手册

 浏览型号IRFR214TRLPBF的Datasheet PDF文件第2页浏览型号IRFR214TRLPBF的Datasheet PDF文件第3页浏览型号IRFR214TRLPBF的Datasheet PDF文件第4页浏览型号IRFR214TRLPBF的Datasheet PDF文件第5页浏览型号IRFR214TRLPBF的Datasheet PDF文件第6页浏览型号IRFR214TRLPBF的Datasheet PDF文件第7页 
IRFR214, IRFU214, SiHFR214, SiHFU214  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
250  
Available  
• Repetitive Avalanche Rated  
RoHS*  
• Surface Mount (IRFR9210/SiHFR9210)  
COMPLIANT  
R
DS(on) (Ω)  
VGS = 10 V  
2.0  
Qg (Max.) (nC)  
8.2  
1.8  
• Straight Lead (IRFU9210/SiHFU9210)  
• Available in Tape and Reel  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
4.5  
Configuration  
Single  
• Ease of Paralleling  
D
• Lead (Pb)-free Available  
DPAK  
(TO-252)  
IPAK  
(TO-251)  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The D-PAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surface mount applications.  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
IRFR214PbF  
SiHFR214-E3  
IRFR214  
DPAK (TO-252)  
IRFR214TRLPbFa  
SiHFR214TL-E3a  
DPAK (TO-252)  
IRFR214TRPbFa  
SiHFR214T-E3a  
IRFR214TRa  
DPAK (TO-252)  
IPAK (TO-251)  
IRFU214PbF  
SiHFU214-E3  
IRFU214  
-
Lead (Pb)-free  
-
-
-
IRFR214TRRa  
SiHFR214TRa  
SnPb  
SiHFR214  
SiHFR214Ta  
SiHFU214  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
250  
20  
V
VGS  
T
C = 25 °C  
2.2  
Continuous Drain Current  
V
GS at 10 V  
ID  
TC =100°C  
1.4  
A
Pulsed Drain Currenta  
IDM  
8.8  
Linear Derating Factor  
0.20  
0.020  
190  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
EAS  
IAR  
mJ  
A
2.2  
Repetitive Avalanche Energya  
EAR  
2.5  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
25  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
TA = 25 °C  
PD  
2.5  
W
dV/dt  
TJ, Tstg  
4.8  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
260d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, Starting TJ = 25 °C, L = 62 mH, RG = 25 Ω, IAS = 2.2 A (see fig. 12).  
c. ISD 2.2 A, dI/dt 65 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1” square PCB (FR-4 or G-10 Material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91269  
S-81411-Rev. A, 07-Jul-08  
www.vishay.com  
1

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