Datasheet > IRFR214

IRFR214

更新时间： 2024-09-15 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	4263K
描述
Power MOSFET

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数据手册

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IRFR214 数据手册

IRFR214, IRFU214, SiHFR214, SiHFU214

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

250

Available

• Repetitive Avalanche Rated

RoHS*

• Surface Mount (IRFR9210/SiHFR9210)

COMPLIANT

R_DS(on)(Ω)

V_GS= 10 V

2.0

Q_g(Max.) (nC)

8.2

1.8

• Straight Lead (IRFU9210/SiHFU9210)

• Available in Tape and Reel

• Fast Switching

_gs(nC)

_gd(nC)

4.5

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D-PAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR214PbF

SiHFR214-E3

IRFR214

DPAK (TO-252)

IRFR214TRLPbF^a

SiHFR214TL-E3^a

DPAK (TO-252)

IRFR214TRPbF^a

SiHFR214T-E3^a

IRFR214TR^a

DPAK (TO-252)

IPAK (TO-251)

IRFU214PbF

SiHFU214-E3

IRFU214

Lead (Pb)-free

IRFR214TRR^a

SiHFR214TR^a

SnPb

SiHFR214

SiHFR214T^a

SiHFU214

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

250

V_GS

T_C= 25 °C

T_C=100°C

2.2

Continuous Drain Current

V_GSat 10 V

I_D

1.4

Pulsed Drain Current^a

I_DM

8.8

Linear Derating Factor

0.20

0.020

190

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

2.2

Repetitive Avalanche Energy^a

E_AR

2.5

Maximum Power Dissipation

T_C= 25 °C

P_D

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_A= 25 °C

P_D

2.5

dV/dt

T_J, T_stg

4.8

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

260^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, Starting T_J= 25 °C, L = 62 mH, R_G= 25 Ω, I_AS= 2.2 A (see fig. 12).

c. I_SD≤ 2.2 A, dI/dt ≤ 65 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1” square PCB (FR-4 or G-10 Material).

www.kersemi.com

12 3 4 5 6 7

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与IRFR214相关器件

型号	品牌	获取价格	描述	数据表
IRFR214, IRFU214, SiHFR214, SiHFU214	VISHAY	获取价格	Power MOSFET
IRFR214_17	VISHAY	获取价格	Power MOSFET
IRFR214A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 2.2A I(D) \| TO-252AA
IRFR214ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR214B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRFR214BTM_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFR214PBF	KERSEMI	获取价格	Power MOSFET
IRFR214PBF	VISHAY	获取价格	Power MOSFET
IRFR214PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFR214TR	VISHAY	获取价格	Power MOSFET

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