Datasheet > IRFR214, IRFU214, SiHFR214, SiHFU214

IRFR214, IRFU214, SiHFR214, SiHFU214

更新时间： 2024-11-06 14:54:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	866K
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Power MOSFET

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IRFR214, IRFU214, SiHFR214, SiHFU214 数据手册

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IRFR214, IRFU214, SiHFR214, SiHFU214

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK

(TO-252)

IPAK

(TO-251)

• Repetitive avalanche rated

• Surface-mount (IRFR214, SiHFR214)

• Straight lead (IRFU214, SiHFU214)

• Available in tape and reel

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Available

N-Channel MOSFET

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

PRODUCT SUMMARY

V_DS(V)

250

2.0

R_DS(on)(Ω)

V_GS= 10 V

Q_gmax. (nC)

8.2

_gs(nC)

_gd(nC)

1.8

4.5

Configuration

Single

ORDERING INFORMATION

PACKAGE

Lead (Pb)-free and

halogen-free

DPAK (TO-252)

SiHFR214-GE3

IRFR214PbF

DPAK (TO-252)

SiHFR214TR-GE3

IRFR214TRPbF ^a

DPAK (TO-252)

IPAK (TO-251)

SiHFR214TRL-GE3

IRFR214TRLPbF ^a

SiHFR214TRR-GE3 SiHFU214-GE3

Lead (Pb)-free

IRFR214TRRPbF ^a

IRFU214PbF

Lead (Pb)-free and

halogen-free

IRFR214PbF-BE3 ^bIRFR214TRLPbF-BE3 ^abIRFR214TRPbF-BE3 ^ab

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

250

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

2.2

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

1.4

Pulsed drain current ^a

I_DM

8.8

Linear derating factor

0.20

0.020

190

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

2.2

Repetitive avalanche energy ^a

E_AR

2.5

Maximum power dissipation

_C= 25 °C

P_D

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

T_A= 25 °C

P_D

2.5

dV/dt

T_J, T_stg

4.8

V/ns

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

-55 to +150

260

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, Starting T_J= 25 °C, L = 62 mH, R_g= 25 Ω, I_AS= 2.2 A (see fig. 12)

c. I_SD≤ 2.2 A, dI/dt ≤ 65 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 Material)

S21-0771-Rev. F, 19-Jul-2021

Document Number: 91269

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与IRFR214, IRFU214, SiHFR214, SiHFU214相关器件

型号	品牌	获取价格	描述	数据表
IRFR214_17	VISHAY	获取价格	Power MOSFET
IRFR214A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 2.2A I(D) \| TO-252AA
IRFR214ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR214B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRFR214BTM_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFR214PBF	KERSEMI	获取价格	Power MOSFET
IRFR214PBF	VISHAY	获取价格	Power MOSFET
IRFR214PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFR214TR	VISHAY	获取价格	Power MOSFET
IRFR214TRA	KERSEMI	获取价格	Power MOSFET

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