Datasheet > IRFR024TRPBF

IRFR024TRPBF

更新时间： 2024-11-14 12:04:55

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	4502K
描述
Power MOSFET

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中文翻译

获取价格

数据手册

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IRFR024TRPBF 数据手册

IRFR024, IRFU024, SiHFR024, SiHFU024

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• Surface Mount (IRFR024/SiHFR024)

0.10

R_DS(on)(Ω)

V_GS= 10 V

RoHS*

• Straight Lead (IRFU024/SiHFU024)

COMPLIANT

Q_g(Max.) (nC)

5.8

• Available in Tape and Reel

• Fast Switching

_gs(nC)

Q_gd(nC)

Configuration

Single

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DPAK

IPAK

(TO-252)

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

IRFU024PbF

SiHFU024-E3

IRFU024

IRFR024PbF

SiHFR024-E3

IRFR024

IRFR024TRPbF^a

SiHFR024T-E3^a

IRFR024TR^a

Lead (Pb)-free

IRFR024TRL^a

SiHFR024TL^a

SnPb

SiHFR024

SiHFR024T^a

SiHFU024

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

9.0

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

P_D

T_C= 25 °C

T_A= 25 °C

2.5

dV/dt

5.5

V/ns

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中文翻译

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