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IRFR110 PDF预览

IRFR110

更新时间: 2024-11-17 22:51:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关
页数 文件大小 规格书
7页 63K
描述
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

IRFR110 数据手册

 浏览型号IRFR110的Datasheet PDF文件第2页浏览型号IRFR110的Datasheet PDF文件第3页浏览型号IRFR110的Datasheet PDF文件第4页浏览型号IRFR110的Datasheet PDF文件第5页浏览型号IRFR110的Datasheet PDF文件第6页浏览型号IRFR110的Datasheet PDF文件第7页 
IRFR110, IRFU110  
Data Sheet  
July 1999  
File Number 3275.3  
4.7A, 100V, 0.540 Ohm, N-Channel Power  
MOSFETs  
Features  
• 4.7A, 100V  
These are N-Channel enhancement mode silicon gate  
power field effect transistors designed, tested, and  
guaranteed to withstand a specified level of energy in the  
breakdown avalanche mode of operation. These advanced  
power MOSFETs are designed for use in applications such  
as switching regulators, switching converters, motor drivers,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate-drive power.  
These transistors can be operated directly from integrated  
circuits.  
• r  
= 0.540  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
o
• 175 C Operating Temperature  
• Related Literature  
Formerly developmental type TA17441.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Ordering Information  
PART NUMBER  
IRFU110  
IRFR110  
PACKAGE  
TO-251AA  
TO-252AA  
BRAND  
IFU110  
IFR110  
Symbol  
D
NOTE: When ordering, use the entire part number.  
G
S
Packaging  
JEDEC TO-251AA  
JEDEC TO-252AA  
SOURCE  
DRAIN  
GATE  
GATE  
DRAIN (FLANGE)  
SOURCE  
DRAIN (FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-371  

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