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IRFR120 PDF预览

IRFR120

更新时间: 2024-11-05 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 1702K
描述
IRFR120

IRFR120 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.05
其他特性:AVALANCHE RATED雪崩能效等级(Eas):210 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):7.7 A最大漏极电流 (ID):7.7 A
最大漏源导通电阻:0.27 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):42 W
最大脉冲漏极电流 (IDM):31 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR120 数据手册

 浏览型号IRFR120的Datasheet PDF文件第2页浏览型号IRFR120的Datasheet PDF文件第3页浏览型号IRFR120的Datasheet PDF文件第4页浏览型号IRFR120的Datasheet PDF文件第5页浏览型号IRFR120的Datasheet PDF文件第6页浏览型号IRFR120的Datasheet PDF文件第7页 
IRFR120, IRFU120, SiHFR120, SiHFU120  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
100  
Available  
• Repetitive Avalanche Rated  
0.27  
RDS(on) (Ω)  
VGS = 10 V  
RoHS*  
• Surface Mount (IRFR120/SiHFR120)  
COMPLIANT  
Qg (Max.) (nC)  
16  
4.4  
7.7  
• Straight Lead (IRFU120/SiHFU120)  
• Available in Tape and Reel  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
Configuration  
Single  
• Ease of Paralleling  
D
• Lead (Pb)-free Available  
DPAK  
IPAK  
(TO-252)  
(TO-251)  
DESCRIPTION  
G
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
S
N-Channel MOSFET  
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surface mount applications.  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
IRFR120PbF  
SiHFR120-E3  
IRFR120  
DPAK (TO-252)  
IRFR120TRPbFa  
SiHFR120T-E3a  
IRFR120TRa  
DPAK (TO-252)  
IRFR120TRRPbFa  
SiHFR120TR-E3a  
IRFR120TRRa  
DPAK (TO-252)  
IRFR120TRLPbFa  
SiHFR120TL-E3a  
IRFR120TRLa  
IPAK (TO-251)  
IRFU120PbF  
SiHFU120-E3  
IRFU120  
Lead (Pb)-free  
SnPb  
SiHFR120  
SiHFR120Ta  
SiHFR120TRa  
SiHFR120TLa  
SiHFU120  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
100  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
TC = 25 °C  
7.7  
Continuous Drain Current  
V
GS at 10 V  
ID  
TC = 100 °C  
4.9  
A
Pulsed Drain Currenta  
IDM  
31  
Linear Derating Factor  
0.33  
0.020  
210  
7.7  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
IAR  
mJ  
A
EAR  
4.2  
mJ  
TC = 25 °C  
TA = 25 °C  
42  
PD  
W
2.5  
dV/dt  
5.5  
V/ns  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91266  
S-Pending-Rev. A, 21-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

IRFR120 替代型号

型号 品牌 替代类型 描述 数据表
IRFR120TRPBF VISHAY

完全替代

IRFR120
IRFR120PBF VISHAY

完全替代

IRFR120
IRFR120TR VISHAY

完全替代

IRFR120

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