Datasheet > IRFR120, IRFU120, SiHFR120, SiHFU120

IRFR120, IRFU120, SiHFR120, SiHFU120

更新时间： 2024-09-18 14:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	831K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFR120, IRFU120, SiHFR120, SiHFU120 数据手册

浏览型号IRFR120, IRFU120, SiHFR120, SiHFU120的Datasheet PDF文件第2页

浏览型号IRFR120, IRFU120, SiHFR120, SiHFU120的Datasheet PDF文件第3页

浏览型号IRFR120, IRFU120, SiHFR120, SiHFU120的Datasheet PDF文件第4页

浏览型号IRFR120, IRFU120, SiHFR120, SiHFU120的Datasheet PDF文件第5页

浏览型号IRFR120, IRFU120, SiHFR120, SiHFU120的Datasheet PDF文件第6页

IRFR120, IRFU120, SiHFR120, SiHFU120

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Surface-mount (IRFR120, SiHFR120)

• Straight lead (IRFU120, SiHFU120)

• Available in tape and reel

DPAK

(TO-252)

IPAK

(TO-251)

Available

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance

N-Channel MOSFET

please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

PRODUCT SUMMARY

V_DS(V)

100

R_DS(on)(Ω)

V_GS= 10 V

0.27

Q_gmax. (nC)

4.4

7.7

_gs(nC)

_gd(nC)

Configuration

Single

ORDERING INFORMATION

PACKAGE

DPAK (TO-252)

IPAK (TO-251)

SiHFR120-GE3

SiHFR120TR-GE3 ^a

SiHFR120TRR-GE3 ^a

SiHFR120TRL-GE3 ^a

SiHFU120-GE3

Lead (Pb)-free

and halogen-free

IRFR120PbF-BE3

IRFR120TRPbF-BE3

IRFR120TRRPbF-BE3

IRFR120TRLPbF-BE3

Lead (Pb)-free

IRFR120PbF

IRFR120TRPbF ^a

IRFR120TRRPbF ^a

IRFR120TRLPbF ^a

IRFU120PbF

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

7.7

Continuous drain current

V_GSat 10 V

I_D

4.9

Pulsed drain current ^a

I_DM

Linear derating factor

0.33

0.020

210

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche Current ^a

E_AS

I_AR

7.7

Repetitive avalanche Energy ^a

E_AR

4.2

Maximum power dissipation

Maximum power dissipation (PCB mount)^e

Peak diode recovery dV/dt ^c

_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

5.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 5.3 mH, R_g= 25 Ω, I_AS= 7.7 A (see fig. 12).

c. I_SD≤ 9.2 A, dI/dt ≤ 110 A/μs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S21-0466-Rev. D, 17-May-2021

Document Number: 91266

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

中文翻译

下载PDF

与IRFR120, IRFU120, SiHFR120, SiHFU120相关器件

型号	品牌	获取价格	描述	数据表
IRFR1205	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=4
IRFR1205	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR1205	FREESCALE	获取价格	HEXFETÂ® Power MOSFET
IRFR1205PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR1205PBF	KERSEMI	获取价格	ULTRA LOW ON-RESISTANCE
IRFR1205TR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Met
IRFR1205TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时
IRFR1205TRL	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Met
IRFR1205TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR1205TRR	KERSEMI	获取价格	Ultra Low On-Resistance

与IRFR120, IRFU120, SiHFR120, SiHFU120相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

16
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

14
SL74HC10N：高性能三输入与非门解析
2024-09-03

93
AIC1781A 电池充电控制器深度解析
2024-09-03

82

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR120, IRFU120, SiHFR120, SiHFU120

IRFR120, IRFU120, SiHFR120, SiHFU120 数据手册

与IRFR120, IRFU120, SiHFR120, SiHFU120相关器件

与IRFR120, IRFU120, SiHFR120, SiHFU120相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR120, IRFU120, SiHFR120, SiHFU120

IRFR120, IRFU120, SiHFR120, SiHFU120 数据手册

与IRFR120, IRFU120, SiHFR120, SiHFU120相关器件

与IRFR120, IRFU120, SiHFR120, SiHFU120相关文章

您还可以找

您在本页遇到什么问题？