Datasheet > IRFR-120

IRFR-120

更新时间： 2024-10-02 12:27:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	825K
描述
Power MOSFET

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数据手册

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IRFR-120 数据手册

IRFR120, IRFU120, SiHFR120, SiHFU120

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

PRODUCT SUMMARY

V_DS(V)

100

• Surface Mount (IRFR120, SiHFR120)

• Straight Lead (IRFU120, SiHFU120)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

_DS(on)()

V_GS= 10 V

0.27

Q_g(Max.) (nC)

Q_gs(nC)

4.4

7.7

_gd(nC)

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

Configuration

Single

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

DPAK

(TO-252)

IPAK

(TO-251)

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free and Halogen-free SiHFR120-GE3

SiHFR120TR-GE3^aSiHFR120TRR-GE3^aSiHFR120TRL-GE3^aSiHFU120-GE3

IRFR120PbF

IRFR120TRPbF^a

SiHFR120T-E3^a

IRFR120TRRPbF^a

SiHFR120TR-E3^a

IRFR120TRLPbF^a

SiHFR120TL-E3^a

IRFU120PbF

SiHFU120-E3

Lead (Pb)-free

SiHFR120-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

7.7

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

4.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

210

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

7.7

Repetitive Avalanche Energy^a

E_AR

4.2

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

Peak Diode Recovery dV/dtc

dV/dt

5.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^d

T_J, T_stg

- 55 to + 150

260

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 5.3 mH, R_g= 25 , I_AS= 7.7 A (see fig. 12).

c. I_SD 9.2 A, dI/dt  110 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0171-Rev. C, 04-Feb-13

Document Number: 91266

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与IRFR-120相关器件

型号	品牌	获取价格	描述	数据表
IRFR120, IRFU120, SiHFR120, SiHFU120	VISHAY	获取价格	Power MOSFET
IRFR1205	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=4
IRFR1205	KERSEMI	获取价格	Ultra Low On-Resistance
IRFR1205	FREESCALE	获取价格	HEXFETÂ® Power MOSFET
IRFR1205PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR1205PBF	KERSEMI	获取价格	ULTRA LOW ON-RESISTANCE
IRFR1205TR	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Met
IRFR1205TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时
IRFR1205TRL	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Met
IRFR1205TRPBF	INFINEON	获取价格	Ultra Low On-Resistance

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