IRFR110ATM_NL

更新时间： 2024-11-18 13:08:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲
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数据手册

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IRFR110ATM_NL 数据手册

IRFR/U110A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.4

I_D= 4.7 A

Improved Gate Charge

Extended Safe Operating Area

D-PAK

I-PAK

Lower Leakage Current : 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.289

(Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

100

4.7

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C)

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

4.7

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

6.5

2.5

Total Power Dissipation (T_A=25

Total Power Dissipation (T_C=25

Linear Derating Factor

)

P_D

0.16

W/ C

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

Junction-to-Case

6.26

R_q

Junction-to-Ambient

C/W

R_q

110

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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