Datasheet > IRFR110TF

IRFR110TF

更新时间： 2023-01-03 04:06:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	97K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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IRFR110TF 数据手册

IRFR110, IRFU110

Data Sheet

January 2002

4.7A, 100V, 0.540 Ohm, N-Channel Power

MOSFETs

Features

• 4.7A, 100V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed, tested, and

guaranteed to withstand a speciﬁed level of energy in the

breakdown avalanche mode of operation. These advanced

power MOSFETs are designed for use in applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate-drive power.

These transistors can be operated directly from integrated

circuits.

• r = 0.540Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 175 C Operating Temperature

• Related Literature

Formerly developmental type TA17441.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

IRFU110

IRFR110

PACKAGE

TO-251AA

TO-252AA

BRAND

IFU110

IFR110

Symbol

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

IRFR110, IRFU110 Rev. B

12 3 4 5 6 7

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