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IRFR110TRL PDF预览

IRFR110TRL

更新时间: 2024-11-05 12:33:43
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲
页数 文件大小 规格书
7页 3888K
描述
Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFR110TRL 数据手册

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IRFR110, IRFU110, SiHFR110, SiHFU110  
Vishay Siliconix  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
100  
Available  
• Repetitive Avalanche Rated  
R
DS(on) (Ω)  
VGS = 10 V  
0.54  
RoHS*  
COMPLIANT  
• Surface Mount (IRFR110/SiHFR110)  
Qg (Max.) (nC)  
Qgs (nC)  
8.3  
2.3  
3.8  
• Straight Lead (IRFU110/SiHFU110)  
• Available in Tape and Reel  
• Fast Switching  
Qgd (nC)  
Configuration  
Single  
D
• Ease of Paralleling  
• Lead (Pb)-free Available  
DPAK  
IPAK  
(TO-252)  
(TO-251)  
DESCRIPTION  
G
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
S
The DPAK is designed for surface mounting using vapor  
N-Channel MOSFET  
phase, infrared, or wave soldering techniques. The straight  
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surcace mount applications.  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
IRFR110PbF  
SiHFR110-E3  
IRFR110  
DPAK (TO-252)  
IRFR110TRLPbFa  
SiHFR110TL-E3a  
IRFR110TRLa  
DPAK (TO-252)  
IRFR110TRPbFa  
SiHFR110T-E3a  
IRFR110TRa  
DPAK (TO-252)  
IRFR110TRRPbFa  
SiHFR110TR-E3a  
IPAK (TO-251)  
IRFU110PbF  
SiHFU110-E3  
IRFU110  
Lead (Pb)-free  
-
-
SnPb  
SiHFR110  
SiHFR110TLa  
SiHFR110Ta  
SiHFU110  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
100  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
4.3  
Continuous Drain Current  
VGS at 10 V  
ID  
2.7  
A
Pulsed Drain Currenta  
IDM  
17  
Linear Derating Factor  
0.20  
0.020  
100  
4.3  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
IAR  
mJ  
A
EAR  
2.5  
mJ  
TC = 25 °C  
TA = 25 °C  
25  
PD  
W
2.5  
dV/dt  
5.5  
V/ns  
www.kersemi.com  
1

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