IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
100
Available
• Repetitive Avalanche Rated
R
DS(on) (Ω)
VGS = 10 V
0.54
RoHS*
COMPLIANT
• Surface Mount (IRFR110/SiHFR110)
Qg (Max.) (nC)
Qgs (nC)
8.3
2.3
3.8
• Straight Lead (IRFU110/SiHFU110)
• Available in Tape and Reel
• Fast Switching
Qgd (nC)
Configuration
Single
D
• Ease of Paralleling
• Lead (Pb)-free Available
DPAK
IPAK
(TO-252)
(TO-251)
DESCRIPTION
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S
The DPAK is designed for surface mounting using vapor
N-Channel MOSFET
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR110PbF
SiHFR110-E3
IRFR110
DPAK (TO-252)
IRFR110TRLPbFa
SiHFR110TL-E3a
IRFR110TRLa
DPAK (TO-252)
IRFR110TRPbFa
SiHFR110T-E3a
IRFR110TRa
DPAK (TO-252)
IRFR110TRRPbFa
SiHFR110TR-E3a
IPAK (TO-251)
IRFU110PbF
SiHFU110-E3
IRFU110
Lead (Pb)-free
-
-
SnPb
SiHFR110
SiHFR110TLa
SiHFR110Ta
SiHFU110
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
100
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TC = 25 °C
TC =100°C
4.3
Continuous Drain Current
VGS at 10 V
ID
2.7
A
Pulsed Drain Currenta
IDM
17
Linear Derating Factor
0.20
0.020
100
4.3
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
EAS
IAR
mJ
A
EAR
2.5
mJ
TC = 25 °C
TA = 25 °C
25
PD
W
2.5
dV/dt
5.5
V/ns
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