Datasheet > IRFR120ATF

IRFR120ATF

更新时间： 2024-11-06 01:19:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	258K
描述
Advanced Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFR120ATF 数据手册

IRFR/U120A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.2

I_D= 8.4 A

Improved Gate Charge

Extended Safe Operating Area

D-PAK

I-PAK

Lower Leakage Current : 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.155 (Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

100

8.4

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C)

5.3

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

141

8.4

3.2

6.5

2.5

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T =25

)

P_D

Total Power Dissipation (T =25

Linear Derating Factor

0.26

W/ C

Operating Junction and

Storage Temperature Range

T_J, T_STG

- 55 to +150

300

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

Junction-to-Case

3.9

R_q

Junction-to-Ambient

R_qJA

110

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

中文翻译

下载PDF

IRFR120ATF 替代型号

型号	品牌	替代类型	描述	数据表
IRFR120ATM	FAIRCHILD	功能相似	Avalanche Rugged Technology
IRFR120	VISHAY	功能相似	IRFR120
IRFR120TRPBF	VISHAY	功能相似	IRFR120

与IRFR120ATF相关器件

型号	品牌	获取价格	描述	数据表
IRFR120ATM	FAIRCHILD	获取价格	Avalanche Rugged Technology
IRFR120N	INFINEON	获取价格	HEXFET Power MOSFET
IRFR120NCLPBF	INFINEON	获取价格	Surface Mount (IRFR120N)
IRFR120NPBF	KERSEMI	获取价格	Surface Mount (IRFR120N) Straight Lead (IRFU120N)
IRFR120NPBF	INFINEON	获取价格	Fast Switching
IRFR120NPBF_15	INFINEON	获取价格	ADVANCED PROCESS TECHNOLOGY
IRFR120NTR	INFINEON	获取价格	Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me
IRFR120NTR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C
IRFR120NTRL	INFINEON	获取价格	Power Field-Effect Transistor, 9.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me
IRFR120NTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me