是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.12 |
雪崩能效等级(Eas): | 141 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 8.4 A | 最大漏极电流 (ID): | 8.4 A |
最大漏源导通电阻: | 0.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 32 W | 最大脉冲漏极电流 (IDM): | 34 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR120ATF | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRFR120ATM | FAIRCHILD |
获取价格 |
Avalanche Rugged Technology | |
IRFR120N | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRFR120NCLPBF | INFINEON |
获取价格 |
Surface Mount (IRFR120N) | |
IRFR120NPBF | KERSEMI |
获取价格 |
Surface Mount (IRFR120N) Straight Lead (IRFU120N) | |
IRFR120NPBF | INFINEON |
获取价格 |
Fast Switching | |
IRFR120NPBF_15 | INFINEON |
获取价格 |
ADVANCED PROCESS TECHNOLOGY | |
IRFR120NTR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR120NTR | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):100V;持续漏极电流(Id)(在25°C | |
IRFR120NTRL | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Me |