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IRFR120A PDF预览

IRFR120A

更新时间: 2024-11-20 22:51:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 257K
描述
Advanced Power MOSFET

IRFR120A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.12
雪崩能效等级(Eas):141 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):8.4 A最大漏极电流 (ID):8.4 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):32 W最大脉冲漏极电流 (IDM):34 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFR120A 数据手册

 浏览型号IRFR120A的Datasheet PDF文件第2页浏览型号IRFR120A的Datasheet PDF文件第3页浏览型号IRFR120A的Datasheet PDF文件第4页浏览型号IRFR120A的Datasheet PDF文件第5页浏览型号IRFR120A的Datasheet PDF文件第6页浏览型号IRFR120A的Datasheet PDF文件第7页 
IRFR/U120A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.2  
ID = 8.4 A  
Improved Gate Charge  
Extended Safe Operating Area  
D-PAK  
I-PAK  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V  
W
Lower RDS(ON) : 0.155 (Typ.)  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
100  
8.4  
Units  
VDSS  
V
O
Continuous Drain Current (TC=25 C)  
ID  
A
O
Continuous Drain Current (TC=100 C)  
5.3  
1
IDM  
VGS  
EAS  
IAR  
Drain Current-Pulsed  
34  
A
V
O
+
_
Gate-to-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
20  
2
141  
8.4  
3.2  
6.5  
2.5  
32  
mJ  
A
O
1
O
EAR  
dv/dt  
1
Repetitive Avalanche Energy  
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
O
O
*
Total Power Dissipation (T =25  
)
)
C
A
O
PD  
Total Power Dissipation (T =25  
C
W
C
O
Linear Derating Factor  
0.26  
W/ C  
Operating Junction and  
Storage Temperature Range  
TJ , TSTG  
- 55 to +150  
300  
O
C
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
Rq  
Junction-to-Case  
--  
--  
--  
3.9  
50  
JC  
O
Rq  
*
Junction-to-Ambient  
Junction-to-Ambient  
/W  
C
JA  
RqJA  
110  
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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