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IRFR110, SiHFR110 PDF预览

IRFR110, SiHFR110

更新时间: 2024-11-19 14:53:19
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威世 - VISHAY /
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13页 776K
描述
Power MOSFET

IRFR110, SiHFR110 数据手册

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IRFR110, SiHFR110  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
D
FEATURES  
• Dynamic dV/dt rating  
DPAK (TO-252)  
• Repetitive avalanche rated  
• Surface-mount (IRFR110, SiHFR110)  
• Available in tape and reel  
• Fast switching  
D
G
Available  
• Ease of paralleling  
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
G
S
N-Channel MOSFET  
DESCRIPTION  
PRODUCT SUMMARY  
VDS (V)  
Third generation power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. Power  
dissipation levels up to 1.5 W are possible in typical surface  
mount applications.  
100  
RDS(on) (Ω)  
VGS = 10 V  
0.54  
Qg max. (nC)  
8.3  
2.3  
3.8  
Q
gs (nC)  
gd (nC)  
Q
Configuration  
Single  
ORDERING INFORMATION  
PACKAGE  
DPAK (TO-252)  
SiHFR110-GE3  
IRFR110PbF  
DPAK (TO-252)  
DPAK (TO-252)  
DPAK (TO-252)  
Lead (Pb)-free and halogen-free  
Lead (Pb)-free  
SiHFR110TRL-GE3  
IRFR110TRLPbF a  
IRFR110TRLPbF-BE3 ab  
SiHFR110TR-GE3  
IRFR110TRPbF a  
IRFR110TRPbF-BE3 ab  
SiHFR110TRR-GE3  
-
Lead (Pb)-free and halogen-free  
IRFR110PbF-BE3 ab  
Notes  
a. See device orientation  
b. “-BE3” denotes alternate manufacturing location  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
100  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
4.3  
Continuous drain current  
VGS at 10 V  
ID  
TC = 100 °C  
2.7  
A
Pulsed drain current a  
IDM  
17  
Linear derating factor  
0.20  
0.020  
75  
W/°C  
Linear derating factor (PCB mount) e  
Single pulse avalanche energy b  
Repetitive avalanche current a  
EAS  
IAR  
mJ  
A
4.3  
Repetitive avalanche energy a  
EAR  
2.5  
mJ  
Maximum power dissipation  
T
C = 25 °C  
25  
PD  
W
V/ns  
°C  
Maximum power dissipation (PCB mount)e  
Peak diode recovery dV/dt c  
TA = 25 °C  
2.5  
dV/dt  
5.5  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d  
TJ, Tstg  
-55 to +150  
260  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)  
b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 Ω, IAS = 4.3 A (see fig. 12)  
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C  
d. 1.6 mm from case  
e. When mounted on 1" square PCB (FR-4 or G-10 material)  
S21-0466-Rev. G, 17-May-2021  
Document Number: 91265  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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