Datasheet > IRFR110, SiHFR110

IRFR110, SiHFR110

更新时间： 2023-12-06 20:02:48

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	776K
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Power MOSFET

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数据手册

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IRFR110, SiHFR110

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK (TO-252)

• Repetitive avalanche rated

• Surface-mount (IRFR110, SiHFR110)

• Available in tape and reel

• Fast switching

Available

• Ease of paralleling

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

PRODUCT SUMMARY

V_DS(V)

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. Power

dissipation levels up to 1.5 W are possible in typical surface

mount applications.

100

R_DS(on)(Ω)

V_GS= 10 V

0.54

Q_gmax. (nC)

8.3

2.3

3.8

_gs(nC)

_gd(nC)

Configuration

Single

ORDERING INFORMATION

PACKAGE

DPAK (TO-252)

SiHFR110-GE3

IRFR110PbF

DPAK (TO-252)

Lead (Pb)-free and halogen-free

Lead (Pb)-free

SiHFR110TRL-GE3

IRFR110TRLPbF ^a

IRFR110TRLPbF-BE3 ^ab

SiHFR110TR-GE3

IRFR110TRPbF ^a

IRFR110TRPbF-BE3 ^ab

SiHFR110TRR-GE3

Lead (Pb)-free and halogen-free

IRFR110PbF-BE3 ^ab

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

4.3

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

2.7

Pulsed drain current ^a

I_DM

Linear derating factor

0.20

0.020

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

4.3

Repetitive avalanche energy ^a

E_AR

2.5

Maximum power dissipation

_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount)^e

Peak diode recovery dV/dt ^c

T_A= 25 °C

2.5

dV/dt

5.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 8.1 mH, R_g= 25 Ω, I_AS= 4.3 A (see fig. 12)

c. I_SD≤ 5.6 A, dI/dt ≤ 75 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0466-Rev. G, 17-May-2021

Document Number: 91265

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与IRFR110, SiHFR110相关器件

型号	品牌	获取价格	描述	数据表
IRFR110_R4941	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR110A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFR110ATF	ROCHESTER	获取价格	4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
IRFR110ATM	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFR110ATM_NL	FAIRCHILD	获取价格	暂无描述
IRFR110PBF	VISHAY	获取价格	Power MOSFET
IRFR110PBF	KERSEMI	获取价格	Dynamic dV/dt Rating Repetitive Avalanche Rated
IRFR110PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRFR110TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR110TR	VISHAY	获取价格	Power MOSFET

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