IRFR110, SiHFR110
www.vishay.com
Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
DPAK (TO-252)
• Repetitive avalanche rated
• Surface-mount (IRFR110, SiHFR110)
• Available in tape and reel
• Fast switching
D
G
Available
• Ease of paralleling
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
G
S
N-Channel MOSFET
DESCRIPTION
PRODUCT SUMMARY
VDS (V)
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. Power
dissipation levels up to 1.5 W are possible in typical surface
mount applications.
100
RDS(on) (Ω)
VGS = 10 V
0.54
Qg max. (nC)
8.3
2.3
3.8
Q
gs (nC)
gd (nC)
Q
Configuration
Single
ORDERING INFORMATION
PACKAGE
DPAK (TO-252)
SiHFR110-GE3
IRFR110PbF
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
Lead (Pb)-free and halogen-free
Lead (Pb)-free
SiHFR110TRL-GE3
IRFR110TRLPbF a
IRFR110TRLPbF-BE3 ab
SiHFR110TR-GE3
IRFR110TRPbF a
IRFR110TRPbF-BE3 ab
SiHFR110TRR-GE3
-
Lead (Pb)-free and halogen-free
IRFR110PbF-BE3 ab
Notes
a. See device orientation
b. “-BE3” denotes alternate manufacturing location
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
100
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
4.3
Continuous drain current
VGS at 10 V
ID
TC = 100 °C
2.7
A
Pulsed drain current a
IDM
17
Linear derating factor
0.20
0.020
75
W/°C
Linear derating factor (PCB mount) e
Single pulse avalanche energy b
Repetitive avalanche current a
EAS
IAR
mJ
A
4.3
Repetitive avalanche energy a
EAR
2.5
mJ
Maximum power dissipation
T
C = 25 °C
25
PD
W
V/ns
°C
Maximum power dissipation (PCB mount)e
Peak diode recovery dV/dt c
TA = 25 °C
2.5
dV/dt
5.5
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TJ, Tstg
-55 to +150
260
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 Ω, IAS = 4.3 A (see fig. 12)
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. When mounted on 1" square PCB (FR-4 or G-10 material)
S21-0466-Rev. G, 17-May-2021
Document Number: 91265
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000