是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252AA | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.13 |
其他特性: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 雪崩能效等级(Eas): | 220 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 42 A |
最大漏源导通电阻: | 0.0075 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 360 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN OVER NICKEL |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
AUIRFR1010ZTRR | INFINEON |
完全替代 |
Advanced Process Technology | |
IRFR1010ZPBF | INFINEON |
完全替代 |
AUTOMOTIVE MOSFET | |
IRFR1010ZTRPBF | INFINEON |
类似代替 |
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR1010ZTRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR1010ZTRR | KERSEMI |
获取价格 |
Advanced Process Technology | |
IRFR1010ZTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR1018E | INFINEON |
获取价格 |
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil | |
IRFR1018EPBF | INFINEON |
获取价格 |
HEXFET TM Power MOSFET | |
IRFR1018ETR | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时 | |
IRFR1018ETRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR1018ETRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR1018ETRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR110 | KERSEMI |
获取价格 |
Dynamic dV/dt Rating Repetitive Avalanche Rated |