Datasheet > IRFR1018ETR

IRFR1018ETR

更新时间： 2024-11-22 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	527K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:47A;Vgs(th)(V):±20;漏源导通电阻:8.4mΩ@10V

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中文翻译

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数据手册

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IRFR1018ETR 数据手册

IRFR1018E

UMW

60V N-Channel MOSFET

Applications

•

High Efficiency Synchronous Rectification in

Uninterruptible Power Supply

High Speed Power Switching

SMPS

Hard Switched and High Frequency Circuits

Benefits

•

V_DS(V) = 60V

I_D=47A (V_GS= 10V)

R_DS(ON)<8.4mΩ (V _GS= 10V)

Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

•

Fully Characterized Capacitance and

Avalanche SOA

Enhanced body diode dV/dt and dI/dt

Capability

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

79c

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

56c

315

P_D@T_C= 25°C

110

Maximum Power Dissipation

0.76

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

Avalanche Current d

I_AR

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Junction-to-Case k

Typ.

Max.

1.32

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient (PCB Mount) jk

Junction-to-Ambient k

110

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

中文翻译

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