Datasheet > IRFR1018E

IRFR1018E

更新时间： 2023-12-06 20:09:38

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	377K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFR1018E 数据手册

PD - 97129A

IRFR1018EPbF

IRFU1018EPbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in

SMPS

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

60V

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

7.1m

8.4m

79A

56A

Benefits

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

D-Pak

I-Pak

IRFR1018EPbF IRFU1018EPbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

79c

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

56c

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

315

P_D@T_C= 25°C

110

Maximum Power Dissipation

Linear Derating Factor

0.76

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

Avalanche Current d

I_AR

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.32

Units

R_θJC

R_θJA

Junction-to-Case k

°C/W

Junction-to-Ambient (PCB Mount) jk

Junction-to-Ambient k

110

Notes through are on page 2

www.irf.com

4/21/09

12 3 4 5 6 7...11

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