Datasheet > IRFR1010ZTRL

IRFR1010ZTRL

更新时间： 2024-11-18 12:46:27

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
11页	4515K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRFR1010ZTRL 数据手册

AUIRFR1010Z

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

55V

●

Advanced Process Technology

LowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

5.8m

7.5m

91A

42A

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

D-Pak

AUIRFR1010Z

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T = 25°C

@ T = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

360

140

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

0.9

± 20

W/°C

Single Pulse Avalanche Energy (Thermally limited)

E_AS

110

220

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

300

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.11

Units

Junction-to-Case

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

www.kersemi.com

06/16/11

12 3 4 5 6 7...11

中文翻译

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与IRFR1010ZTRL相关器件

型号	品牌	获取价格	描述	数据表
IRFR1010ZTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me
IRFR1010ZTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me
IRFR1010ZTRR	KERSEMI	获取价格	Advanced Process Technology
IRFR1010ZTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me
IRFR1018E	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRFR1018EPBF	INFINEON	获取价格	HEXFET TM Power MOSFET
IRFR1018ETR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
IRFR1018ETRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me
IRFR1018ETRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me
IRFR1018ETRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me

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