型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFR1010ZTRPBF | INFINEON |
类似代替 |
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR1010ZTRLPBF | INFINEON |
类似代替 |
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR1010ZPBF | INFINEON |
类似代替 |
AUTOMOTIVE MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR1010ZPBF | INFINEON |
获取价格 |
AUTOMOTIVE MOSFET | |
IRFR1010ZTRL | KERSEMI |
获取价格 |
Advanced Process Technology | |
IRFR1010ZTRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR1010ZTRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR1010ZTRR | KERSEMI |
获取价格 |
Advanced Process Technology | |
IRFR1010ZTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR1018E | INFINEON |
获取价格 |
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil | |
IRFR1018EPBF | INFINEON |
获取价格 |
HEXFET TM Power MOSFET | |
IRFR1018ETR | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时 | |
IRFR1018ETRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Me |