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IRFR1010Z PDF预览

IRFR1010Z

更新时间: 2024-11-04 21:54:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 293K
描述
AUTOMOTIVE MOSFET

IRFR1010Z 数据手册

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PD - 96897  
AUTOMOTIVE MOSFET  
IRFR1010Z  
IRFU1010Z  
Features  
HEXFET® Power MOSFET  
lAdvanced Process Technology  
lUltra Low On-Resistance  
l175°C Operating Temperature  
lFast Switching  
D
VDSS = 55V  
lRepetitive Avalanche Allowed up to Tjmax  
RDS(on) = 7.5mΩ  
G
Description  
ID = 42A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features com-  
bine to make this design an extremely efficient and  
reliable device for use in Automotive applications  
and a wide variety of other applications.  
S
D-Pak  
I-Pak  
IRFU1010Z  
IRFR1010Z  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
91  
D
D
D
C
@ T = 100°C  
65  
42  
A
C
@ T = 25°C  
C
360  
140  
DM  
P
@T = 25°C Power Dissipation  
W
D
C
Linear Derating Factor  
0.9  
W/°C  
V
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
± 20  
GS  
EAS (Thermally limited)  
110  
220  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
Operating Junction and  
EAR  
mJ  
T
T
-55 to + 175  
J
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.11  
40  
Units  
Junction-to-Case  
RθJC  
RθJA  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
–––  
°C/W  
Rθ  
–––  
110  
JA  
HEXFET® isaregisteredtrademarkofInternationalRectifier.  
www.irf.com  
1
9/29/04  

IRFR1010Z 替代型号

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IRFR1010ZTRPBF INFINEON

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