Datasheet > IRFR024TRLA

IRFR024TRLA

更新时间： 2024-09-28 21:14:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	1159K
描述
Transistor

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技术参数
数据手册

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IRFR024TRLA 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

IRFR024TRLA 数据手册

IRFR024, IRFU024, SiHFR024, SiHFU024

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Dynamic dV/dt Rating

R_DS(on)(Ω)

V_GS= 10 V

0.10

• Surface Mount (IRFR024, SiHFR024)

• Straight Lead (IRFU024, SiHFU024)

• Available in Tape and Reel

• Fast Switching

Q_g(Max.) (nC)

5.8

_gs(nC)

_gd(nC)

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

N-Channel MOSFET

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHFR024-GE3

IRFR024PbF

SiHFR024-E3

IRFR024

DPAK (TO-252)

SiHFR024TR-GE3

IRFR024TRPbF^a

SiHFR024T-E3^a

IRFR024TR^a

DPAK (TO-252)

IPAK (TO-251)

SiHFU024-GE3

IRFU024PbF

SiHFU024-E3

IRFU024

Lead (Pb)-free and Halogen-free

SiHFR024TRL-GE3

Lead (Pb)-free

SnPb

IRFR024TRL^a

SiHFR024TL^a

SiHFR024

SiHFR024T^a

SiHFU024

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

9.0

Continuous Drain Current

V_GSat 10 V

I_D

_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

P_D

T_C= 25 °C

T_A= 25 °C

2.5

dV/dt

5.5

V/ns

°C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 541 μH, R_g= 25 Ω, I_AS= 14 A (see fig. 12).

c. I_SD≤ 17 A, dI/dt ≤ 110 A/μs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91264

S10-1122-Rev. C, 10-May-10

www.vishay.com

12 3 4 5 6 7...10

中文翻译

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与IRFR024TRLA相关器件

型号	品牌	获取价格	描述	数据表
IRFR024TRLPBF	INFINEON	获取价格	暂无描述
IRFR024TRPBF	KERSEMI	获取价格	Power MOSFET
IRFR024TRPBF	VISHAY	获取价格	Power MOSFET
IRFR025	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 14A I(D) \| TO-252AA
IRFR034	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 23A I(D) \| TO-252AA
IRFR034A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 23A I(D) \| TO-252AA
IRFR1010Z	KERSEMI	获取价格	Advanced Process Technology
IRFR1010Z	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFR1010ZPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFR1010ZTRL	KERSEMI	获取价格	Advanced Process Technology

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