Datasheet > IPD800N06NG_08

IPD800N06NG_08

更新时间： 2024-11-20 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体转换器开关晶体管
页数	文件大小	规格书
9页	507K
描述
OptiMOS® Power-Transistor Features For fast switching converters and sync. rectification

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IPD800N06NG_08 数据手册

IPD800N06N G

OptiMOS^®Power-Transistor

Product Summary

Features

V _DS

• For fast switching converters and sync. rectification

• N-channel enhancement - normal level

R _DS(on),max

I _D

mΩ

• 175 °C operating temperature

• Avalanche rated

• Pb-free lead plating, RoHS compliant

IPD800N06N G

Type

PG-TO252-3

Package

Marking

800N06N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C¹⁾

Continuous drain current

I _D,pulse

E _AS

Pulsed drain current

I _D=16 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=16 A, V _DS=48 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾See figure 3

Rev.1.3

page 1

2008-09-01

12 3 4 5 6 7...9

中文翻译

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