Datasheet > IPD900P06NM

IPD900P06NM

更新时间： 2024-11-06 11:11:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	894K
描述
OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.

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IPD900P06NM 数据手册

IPD900P06NM

MOSFET

OptiMOS^TMꢀPowerꢀTransistor,ꢀ-60ꢀV

D-PAK

Features

tab

•ꢀP-Channel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀ100%ꢀavalancheꢀtested

•ꢀNormalꢀLevel

•ꢀEnhancementꢀmode

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Gate

Pin 1

Parameter

Value

Unit

Source

Pin 3

V_DS

-60

R_DS(on),max

I_D

mΩ

-16.4

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPD900P06NM

PG-TO 252-3

900P06NM

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2019-04-03

12 3 4 5 6 7...10

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