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IPD80R2K7C3A PDF预览

IPD80R2K7C3A

更新时间: 2024-11-06 11:13:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 510K
描述
电动汽车领域,例如插电充电型混合动力汽车(PHEV)和纯电动汽车(BEV)),对更高系统电压的需求日益增长,CoolMOS™ C3A 技术就是专为满足这种需求而设计的。

IPD80R2K7C3A 数据手册

 浏览型号IPD80R2K7C3A的Datasheet PDF文件第2页浏览型号IPD80R2K7C3A的Datasheet PDF文件第3页浏览型号IPD80R2K7C3A的Datasheet PDF文件第4页浏览型号IPD80R2K7C3A的Datasheet PDF文件第5页浏览型号IPD80R2K7C3A的Datasheet PDF文件第6页浏览型号IPD80R2K7C3A的Datasheet PDF文件第7页 
Data Sheet  
IPD80R2k7C3A  
CoolMOSTM Power Transistor  
Features  
Product Summary  
VDS  
800  
2.7  
12  
V
• New revolutionary high voltage technology  
• Extreme dv/dt rated  
RDS(on)max @ Tj = 25°C  
W
Qg,typ  
nC  
• High peak current capability  
• Qualified according to AEC Q101  
• Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compound  
PG-TO252-3  
• Ultra low gate charge  
• Ultra low effective capacitances  
CoolMOSTM 800V designed for:  
• Automotive application with high DC bulk voltage  
• Switching Application ( i.e. active clamp forward )  
Type  
Package  
Marking  
IPD80R2k7C3A  
PG-TO252-3  
80C2k7A  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
2
1.2  
Continuous drain current  
A
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25 °C  
6
I D=1 A, V DD=50 V  
I D=2 A, V DD=50 V  
Avalanche energy, single pulse  
90  
mJ  
2),3)  
2),3)  
E AR  
0.05  
2
Avalanche energy, repetitive t AR  
I AR  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V DS=0…640 V  
static  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
42  
AC (f >1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
-40 ... 150  
Operating, Storage temperature  
Tj,Tstg  
°C  
Final Data Sheet, Rev. 1.1  
page 1  
2013-11-21  

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