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IPD80R600P7 PDF预览

IPD80R600P7

更新时间: 2023-12-06 19:52:32
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动驱动器
页数 文件大小 规格书
13页 1206K
描述
800V CoolMOS? P7超结MOSFET系列完全适合低功率SMPS应用,可完全满足性能,易用性和性价比等市场需求。它主要侧重于反激式应用,包括适配器和充电器,LED驱动器,音频SMPS,辅助和工业电源。

IPD80R600P7 数据手册

 浏览型号IPD80R600P7的Datasheet PDF文件第2页浏览型号IPD80R600P7的Datasheet PDF文件第3页浏览型号IPD80R600P7的Datasheet PDF文件第4页浏览型号IPD80R600P7的Datasheet PDF文件第5页浏览型号IPD80R600P7的Datasheet PDF文件第6页浏览型号IPD80R600P7的Datasheet PDF文件第7页 
IPD80R600P7  
MOSFET  
DPAK  
800VꢀCoolMOSªꢀP7ꢀPowerꢀDevice  
Theꢀlatestꢀ800VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ800V  
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith  
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears  
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.  
tab  
Features  
2
1
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss;ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss  
•ꢀBest-in-classꢀDPAKꢀRDS(on)  
3
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V  
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection  
•ꢀFullyꢀoptimizedꢀportfolio  
Drain  
Pin 2, Tab  
Benefits  
•ꢀBest-in-classꢀperformance  
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower  
assemblyꢀcosts  
*1  
Gate  
Pin 1  
*2  
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel  
Source  
Pin 3  
*1: Internal body diode  
*2: Integrated ESD diode  
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures  
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns  
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns  
Potentialꢀapplications  
RecommendedꢀforꢀhardꢀandꢀsoftꢀswitchingꢀflybackꢀtopologiesꢀforꢀLED  
Lighting,ꢀlowꢀpowerꢀChargersꢀandꢀAdapters,ꢀAudio,ꢀAUXꢀpowerꢀand  
Industrialꢀpower.ꢀAlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀapplications  
andꢀSolar.  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj=25°C  
RDS(on),max  
Qg,typ  
Value  
800  
0.60  
20  
Unit  
V
nC  
A
ID  
8
Eoss @ 500V  
VGS(th),typ  
2.0  
3
µJ  
V
ESD class (HBM)  
2
-
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPD80R600P7  
PG-TO252-3  
80R600P7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.3,ꢀꢀ2022-01-13  

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