Datasheet > IPD85P04P407ATMA2

IPD85P04P407ATMA2

更新时间： 2024-09-30 19:38:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	149K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IPD85P04P407ATMA2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	Factory Lead Time：	16 weeks
风险等级：	1.46	Base Number Matches：	1

IPD85P04P407ATMA2 数据手册

浏览型号IPD85P04P407ATMA2的Datasheet PDF文件第2页

浏览型号IPD85P04P407ATMA2的Datasheet PDF文件第3页

浏览型号IPD85P04P407ATMA2的Datasheet PDF文件第4页

浏览型号IPD85P04P407ATMA2的Datasheet PDF文件第5页

浏览型号IPD85P04P407ATMA2的Datasheet PDF文件第6页

IPD85P04P4-07

OptiMOS^®-P2 Power-Transistor

Product Summary

V _DS

R _DS(on)

I _D

-40

7.3

-85

Features

• P-channel - Normal Level - Enhancement mode

• AEC qualified

PG-TO252-3-313

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPD85P04P4-07

PG-TO252-3-313

4P0407

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

V _GS=-10V

I _D

Continuous drain current

-85

-61

T _C=100°C,

V _GS=-10V²⁾

Pulsed drain current¹⁾

I _D,pulse

E _AS

I _AS

T _C=25°C

-340

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

Gate source voltage

I _D=-42.5A

-85

±20

V _GS

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2011-04-18

12 3 4 5 6 7...9

中文翻译

下载PDF

与IPD85P04P407ATMA2相关器件

型号	品牌	获取价格	描述	数据表
IPD85P04P4L-06	INFINEON	获取价格	OptiMOS-P2 Power-Transistor
IPD85P04P4L06ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 85A I(D), 40V, 0.0064ohm, 1-Element, P-Channel, Silicon, Me
IPD900P06NM	INFINEON	获取价格	OptiMOS™ P-channel MOSFETs 60V in DPAK packag
IPD90N03S4L-02	INFINEON	获取价格	OptiMOS-T2 Power-Transistor
IPD90N03S4L02ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Me
IPD90N03S4L-03	INFINEON	获取价格	OptiMOS-T2 Power-Transistor
IPD90N03S4L-03_10	INFINEON	获取价格	OptiMOS-T2 Power-Transistor
IPD90N03S4L03ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me
IPD90N04S3-04	INFINEON	获取价格	OptiMOS-T Power-Transistor
IPD90N04S304ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Me