Datasheet > IPB072N15N3G

IPB072N15N3G

更新时间： 2024-11-06 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体栅极晶体管
页数	文件大小	规格书
11页	419K
描述
OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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IPB072N15N3G 数据手册

IPB072N15N3 G IPP075N15N3 G

IPI075N15N3 G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V _DS

150

7.2

• N-channel, normal level

R _{DS(on),max (TO263)}

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

100

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Type

IPB072N15N3 G

IPP075N15N3 G

IPI075N15N3 G

Package

Marking

PG-TO263-3

072N15N

PG-TO220-3

075N15N

PG-TO262-3

075N15N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

100

Pulsed drain current²⁾

I _D,pulse

E _AS

400

780

I _D=100 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=100 A, V _DS=120 V,

di /dt =100 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.06

page 1

2010-04-19

12 3 4 5 6 7...11

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IPB072N15N3G 替代型号

型号	品牌	替代类型	描述	数据表
IPB072N15N3GATMA1	INFINEON	完全替代	Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon,
IPI075N15N3G	INFINEON	完全替代	OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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