型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB06N03LA | INFINEON |
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OptiMOS 2 Power-Transistor | |
IPB06N03LAG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPB06N03LB | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPB070N06LG | INFINEON |
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OptiMOS㈢ Power-Transistor | |
IPB070N06LGATMA1 | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Me | |
IPB070N06NG | INFINEON |
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OptiMOS㈢ Power-Transistor | |
IPB070N06NGATMA1 | INFINEON |
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Power Field-Effect Transistor, 80A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Me | |
IPB070N08N3G | INFINEON |
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OptiMOS3 Power-Transistor | |
IPB072N15N3 G | INFINEON |
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与次优竞品相比,150V OptiMOS™ R DS(on) 降低 40%,品质因数 (F | |
IPB072N15N3G | INFINEON |
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OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) |