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IPB06CNE8NG PDF预览

IPB06CNE8NG

更新时间: 2024-11-20 03:44:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 459K
描述
OptiMOS㈢2 Power-Transistor

IPB06CNE8NG 数据手册

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IPB06CNE8N G IPI06CNE8N G  
IPP06CNE8N G  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
85  
6.2  
100  
V
• N-channel, normal level  
R DS(on),max (TO263)  
I D  
m  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
IPB06CNE8N G  
IPI06CNE8N G  
IPP06CNE8N G  
Type  
PG-TO263-3  
06CNE8N  
PG-TO262-3  
06CNE8N  
PG-TO220-3  
06CNE8N  
Package  
Marking  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
100  
88  
A
T C=100 °C  
Pulsed drain current3)  
I D,pulse  
E AS  
T C=25 °C  
400  
480  
I D=100 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=100 A, V DS=68 V,  
di /dt =100 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
V
P tot  
T C=25 °C  
Power dissipation  
214  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 1.01  
page 1  
2006-02-14  

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