IPB06N03LAG

更新时间： 2024-09-15 03:44:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	277K
描述
OptiMOS㈢2 Power-Transistor

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中文翻译

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数据手册

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IPB06N03LAG 数据手册

IPB06N03LA G

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

5.9

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC¹⁾for target applications

_DS(on),max(SMD version)

mΩ

I _D

• N-channel - Logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

PG-TO263-3-2

• Superior thermal resistance

• 175 °C operating temperature

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Type

Package

Marking

IPB06N03LA G

PG-TO263-3-2

06N03LA

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C³⁾

I _D,pulse

Pulsed drain current

350

225

E _AS

I _D=45 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=50 A, V _DS=20 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage⁴⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

Rev. 1.6

page 1

2006-05-10

12 3 4 5 6 7...9

中文翻译

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