HMC635
v00.1107
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Typical Applications
The HMC635 is ideal for:
• Point-to-Point Radios
Features
Gain: 19.5 dB
2
P1dB: +23 dBm
• Point-to-Multi-Point Radios & VSAT
• LO Driver for Mixers
Output IP3: +29 dBm
Saturated Power: +24 dBm @ 15% PAE
Supply Voltage: +5V @ 280 mA
50 Ohm Matched Input/Output
Die Size: 1.95 x 0.84 x 0.10 mm
• Military & Space
Functional Diagram
General Description
The HMC635 is a GaAs PHEMT MMIC Driver
Amplifier die which operates between 18 and 40 GHz.
The amplifier provides 19.5 dB of gain, +29 dBm
Output IP3, and +23 dBm of output power at 1 dB
gain compression, while requiring 280 mA from a +5V
supply. Ideal as a driver amplifier for microwave radio
applications, or as an LO driver for mixers operating
between 18 and 40 GHz, the HMC635 is capable of
providing up to +24 dBm of saturated output power at
15% PAE. The amplifier’s I/Os are DC blocked and
internally matched to 50 Ohms making it ideal for
integration into Multi-Chip-Modules (MCMs). All data
is taken with die connected at input and output RF
ports via two 1 mil wedge bonds of 500μm length.
Electrical Specifications, TA = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA [1]
Parameter
Min.
Typ.
18 - 36
19.5
0.045
15
Max.
Min.
Typ.
36 - 40
19
Max.
Units
GHz
dB
Frequency Range
Gain
16
16
Gain Variation Over Temperature
Input Return Loss
0.060
0.045
9
0.050
dB/ °C
dB
Output Return Loss
13
12
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
19
24
23
14
21
19
dBm
dBm
dBm
dB
24
20
29
27
8
7
Supply Current (Idd1 + Idd2 + Idd3 + Idd4)
280
280
mA
[1]Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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