Datasheet > HMC637BPM5ETR

HMC637BPM5ETR

更新时间： 2024-02-26 13:21:22

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
21页	630K
描述
HMC637BPM5ETR

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HMC637BPM5ETR 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LCC32,.2SQ,20
针数：	32	Reach Compliance Code：	compliant
风险等级：	5.68	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	12.5 dB
最大输入功率 (CW)：	25 dBm	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	32
最大工作频率：	7500 MHz	最小工作频率：
最高工作温度：	85 °C	最低工作温度：	-55 °C
封装等效代码：	LCC32,.2SQ,20	电源：	12 V
射频/微波设备类型：	WIDE BAND MEDIUM POWER	表面贴装：	YES
技术：	GAAS	最大电压驻波比：	7
Base Number Matches：	1

HMC637BPM5ETR 数据手册

GaAs, pHEMT, MMIC, Single Positive

Supply, DC to 7.5 GHz, 1 W Power Amplifier

Data Sheet

HMC637BPM5E

FEATURES

FUNCTIONAL BLOCK DIAGRAM

P1dB output power: 28 dBm typical

Gain: 15.5 dB typical

Output IP3: 39 dBm typical

Self biased at V_DD= 12 V at 345 mA typical

Optional bias control on V_GG1 for I_DQadjustment

Optional bias control on V_GG2 for IP2 and IP3 optimization

50 Ω matched input/output

GND

24 GND

23 NIC

GND

NIC

21 RFOUT/V

GND

RFIN

GND

NIC

GND

NIC

32-lead, 5 mm × 5 mm LFCSP package: 25 mm²

18 NIC

17 GND

GND

APPLICATIONS

PACKAGE

BASE

Military and space

Test instrumentation

GND

Figure 1.

GENERAL DESCRIPTION

The HMC637BPM5E is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), cascode distributed

power amplifier. The device is self biased in normal operation

and a 3.5 dB noise figure, while requiring 345 mA from a 12 V

supply voltage (V_DD). Gain flatness is excellent from dc to 7.5 GHz

at 0.5 dB typical, making the HMC637BPM5E ideal for military,

space, and test equipment applications. The HMC637BPM5E

also features inputs/outputs (I/Os) that are internally matched to

50 Ω, housed in a RoHS-compliant, 5 mm × 5 mm, premolded

cavity, lead frame chip scale package (LFCSP), making the device

compatible with high volume, surface-mount technology (SMT)

assembly equipment.

and features optional bias control for quiescent current (I_DQ

)

adjustment and for second-order intercept (IP2) and third-order

intercept (IP3) optimization. The amplifier operates from dc to

7.5 GHz, providing 15.5 dB of small signal gain, 28 dBm output

power at 1 dB gain compression, a typical output IP3 of 39 dBm,

Rev. 0

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks andregisteredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

12 3 4 5 6 7...21

下载PDF

与HMC637BPM5ETR相关器件

型号	品牌	描述	获取价格	数据表
HMC637LP5	HITTITE	GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz	获取价格
HMC637LP5E	HITTITE	GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz	获取价格
HMC637LP5ETR	HITTITE	暂无描述	获取价格
HMC6380	ADI	宽带 MMIC VCO，带有缓冲放大器 8.0 - 16.0 GHz	获取价格
HMC639	ADI	高IP3、低噪声放大器，0.2 - 4.0 GHz	获取价格
HMC639ST89	ADI	200MHz - 4000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SOT-89, 3 PIN	获取价格

与HMC637BPM5ETR相关文章

资料手册解读：UC3842参数和管脚说明
2024-05-22

3
一文带你了解无源晶振的负载电容为何要加两颗谐振电容CL1和CL2
2024-05-22

4
玻璃管保险丝与陶瓷管保险丝：区别与替代性探讨
2024-05-22

2
PCF8574资料解读：主要参数分析、引脚说明
2024-05-21

11

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC637BPM5ETR

HMC637BPM5ETR 技术参数

HMC637BPM5ETR 数据手册

与HMC637BPM5ETR相关器件

与HMC637BPM5ETR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC637BPM5ETR

HMC637BPM5ETR 技术参数

HMC637BPM5ETR 数据手册

与HMC637BPM5ETR相关器件

与HMC637BPM5ETR相关文章

您还可以找

您在本页遇到什么问题？