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HMC641LP4ETR PDF预览

HMC641LP4ETR

更新时间: 2024-11-25 21:14:59
品牌 Logo 应用领域
HITTITE 分离技术隔离技术射频微波
页数 文件大小 规格书
6页 549K
描述
SP4T, 0MHz Min, 20000MHz Max, 1 Func, 4.2dB Insertion Loss-Max, GAAS, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, 24 PIN

HMC641LP4ETR 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:LCC24,.16SQ,20Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:8.53
1dB压缩点:15 dBm其他特性:HIGH ISOLATION
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):23.98 dBm最大插入损耗:4.2 dB
最小隔离度:30 dBJESD-609代码:e3
安装特点:SURFACE MOUNT功能数量:1
端子数量:24准时:0.088 µs
最大工作频率:20000 MHz最小工作频率:
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC24,.16SQ,20
端口终止:ABSORPTIVE电源:-5 V
射频/微波设备类型:SP4T子类别:RF/Microwave Switches
表面贴装:YES技术:GAAS
端子面层:Matte Tin (Sn)Base Number Matches:1

HMC641LP4ETR 数据手册

 浏览型号HMC641LP4ETR的Datasheet PDF文件第2页浏览型号HMC641LP4ETR的Datasheet PDF文件第3页浏览型号HMC641LP4ETR的Datasheet PDF文件第4页浏览型号HMC641LP4ETR的Datasheet PDF文件第5页浏览型号HMC641LP4ETR的Datasheet PDF文件第6页 
HMC641LP4E  
v02.0611  
GaAs MMIC SP4T NoN-RefleCTIve  
SwITCh, DC - 20 Ghz  
Typicaꢁ Appꢁicatiꢂns  
tꢀꢁ hMc641LP4e ꢂs ꢂdꢁal for:  
• Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military & Space Hybrids  
• Test Instrumentation  
fꢀaturꢀs  
Broadband Pꢁrformanꢃꢁ: Dc - 20 Ghz  
hꢂgꢀ isolaꢄꢂon: 45 dB @ 10 Ghz  
Loꢅ insꢁrꢄꢂon Loss: 2.3 dB @ 10 Ghz  
inꢄꢁgraꢄꢁd 2:4 ttL Dꢁꢃodꢁr  
24 Lꢁad 4x4 mm SMt Paꢃkagꢁ: 16 mm²  
• SATCOM & Sensors  
Gꢀnꢀraꢁ Dꢀscriptiꢂn  
functiꢂnaꢁ Diagram  
tꢀꢁ hMc641LP4e ꢂs a broadband non-rꢁflꢁꢃꢄꢂvꢁ  
GaAs pheMt SP4t sꢅꢂꢄꢃꢀ ꢂn a ꢃompaꢃꢄ 4x4 mm  
plasꢄꢂꢃ paꢃkagꢁ. covꢁrꢂng Dc ꢄo 20 Ghz, ꢄꢀꢂs sꢅꢂꢄꢃꢀ  
offꢁrs ꢀꢂgꢀ ꢂsolaꢄꢂon, loꢅ ꢂnsꢁrꢄꢂon loss and on-ꢃꢀꢂp  
ꢄꢁrmꢂnaꢄꢂon of ꢂsolaꢄꢁd porꢄs. tꢀꢂs sꢅꢂꢄꢃꢀ also ꢂnꢃludꢁs  
an on board bꢂnary dꢁꢃodꢁr ꢃꢂrꢃuꢂꢄ ꢅꢀꢂꢃꢀ rꢁduꢃꢁs  
ꢄꢀꢁ numbꢁr of rꢁquꢂrꢁd logꢂꢃ ꢃonꢄrol lꢂnꢁs from four  
ꢄo ꢄꢅo. tꢀꢁ hMc641LP4e ꢂs ꢃonꢄrollꢁd ꢅꢂꢄꢀ 0/ -5V  
logꢂꢃ, ꢁxꢀꢂbꢂꢄs fasꢄ sꢅꢂꢄꢃꢀꢂng spꢁꢁd and ꢃonsumꢁs  
muꢃꢀ lꢁss Dc ꢃurrꢁnꢄ ꢄꢀan pꢂn dꢂodꢁ basꢁd soluꢄꢂons.  
tꢀꢁ hMc641LP4e ꢂs also avaꢂlablꢁ ꢂn dꢂꢁ form as ꢄꢀꢁ  
hMc641.  
eꢁꢀctricaꢁ Spꢀcificatiꢂns, TA = +25° C, witꢃ 0/-5v Cꢂntrꢂꢁ, vss = -5v, 50 oꢃm Systꢀm  
Paramꢁꢄꢁr  
Frꢁquꢁnꢃy  
Mꢂn.  
typ.  
Max.  
Unꢂꢄs  
Dc - 12 Ghz  
Dc - 20 Ghz  
2.0  
3.0  
3.2  
4.2  
dB  
dB  
insꢁrꢄꢂon Loss  
Dc - 12 Ghz  
Dc - 20 Ghz  
30  
30  
42  
40  
dB  
dB  
Isolation (RFC to RF1 - RF4)  
Dc - 12 Ghz  
Dc - 20 Ghz  
18  
17  
dB  
dB  
Return Loss  
“On State”  
“Off State”  
Return Loss  
Dc - 20 Ghz  
13  
dB  
0.05 - 0.25 Ghz  
0.25- 20 Ghz  
10  
20  
15  
22  
dBm  
dBm  
inpuꢄ Poꢅꢁr for 1 dB comprꢁssꢂon  
0.05 - 0.25 Ghz  
0.25 - 20 Ghz  
30  
38  
dBm  
dBm  
Input Third Order Intercept  
(Two-Tone Input Power= +14 dBm Each Tone)  
Sꢅꢂꢄꢃꢀꢂng cꢀaraꢃꢄꢁrꢂsꢄꢂꢃs  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
Dc - 20 Ghz  
15  
88  
ns  
ns  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
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