HMC637
v03.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Typical Applications
Features
Tꢀꢁ hmC637 ꢂꢃ ꢂdꢁaꢉ ꢋꢅꢄ:
• Tꢁꢉꢁcꢅꢇ iꢊꢋꢄaꢃtꢄuctuꢄꢁ
• mꢂcꢄꢅꢆavꢁ radꢂꢅ & VsAT
• mꢂꢉꢂtaꢄy & sꢈacꢁ
p1dB outꢈut pꢅꢆꢁꢄ: +29 dBꢇ
Gaꢂꢊ: 14 dB
outꢈut ip3: +41 dBꢇ
3
Bꢂaꢃ suꢈꢈꢉꢂꢁꢃ: +12V, +6V, -1V
50 oꢀꢇ matcꢀꢁd iꢊꢈut/outꢈut
Dꢂꢁ sꢂzꢁ: 2.98 x 2.48 x 0.1 ꢇꢇ
• Tꢁꢃt iꢊꢃtꢄuꢇꢁꢊtatꢂꢅꢊ
• fꢂbꢁꢄ oꢈtꢂcꢃ
Functional Diagram
General Description
Tꢀꢁ hmC637 ꢂꢃ a GaAꢃ mmiC mesfeT Dꢂꢃtꢄꢂbutꢁd
pꢅꢆꢁꢄ Aꢇꢈꢉꢂfiꢁꢄ dꢂꢁ ꢆꢀꢂcꢀ ꢅꢈꢁꢄatꢁꢃ bꢁtꢆꢁꢁꢊ DC aꢊd
6 Ghz. Tꢀꢁ aꢇꢈꢉꢂfiꢁꢄ ꢈꢄꢅvꢂdꢁꢃ 14 dB ꢅꢋ gaꢂꢊ,
+41 dBꢇ ꢅutꢈut ip3 aꢊd +29 dBꢇ ꢅꢋ ꢅutꢈut ꢈꢅꢆꢁꢄ
at 1 dB gaꢂꢊ cꢅꢇꢈꢄꢁꢃꢃꢂꢅꢊ ꢆꢀꢂꢉꢁ ꢄꢁquꢂꢄꢂꢊg 400ꢇA
ꢋꢄꢅꢇ a +12V ꢃuꢈꢈꢉy. Gaꢂꢊ flatꢊꢁꢃꢃ ꢂꢃ ꢁxcꢁꢉꢉꢁꢊt at 0.5
dB ꢋꢄꢅꢇ DC tꢅ 6 Ghz ꢇakꢂꢊg tꢀꢁ hmC637 ꢂdꢁaꢉ ꢋꢅꢄ
ew, eCm, radaꢄ aꢊd tꢁꢃt ꢁquꢂꢈꢇꢁꢊt aꢈꢈꢉꢂcatꢂꢅꢊꢃ.
Tꢀꢁ hmC637 aꢇꢈꢉꢂfiꢁꢄ i/oꢃ aꢄꢁ ꢂꢊtꢁꢄꢊaꢉꢉy ꢇatcꢀꢁd
tꢅ 50 oꢀꢇꢃ ꢋacꢂꢉꢂtatꢂꢊg ꢂꢊtꢁgꢄatꢂꢅꢊ ꢂꢊtꢅ mutꢉꢂ-Cꢀꢂꢈ-
mꢅduꢉꢁꢃ (mCmꢃ). Aꢉꢉ data ꢂꢃ takꢁꢊ ꢆꢂtꢀ tꢀꢁ cꢀꢂꢈ
cꢅꢊꢊꢁctꢁd vꢂa tꢆꢅ 0.025ꢇꢇ (1 ꢇꢂꢉ) ꢆꢂꢄꢁ bꢅꢊdꢃ ꢅꢋ
ꢇꢂꢊꢂꢇaꢉ ꢉꢁꢊgtꢀ 0.31 ꢇꢇ (12 ꢇꢂꢉꢃ).
Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +6V, Idd= 400mA*
paꢄaꢇꢁtꢁꢄ
mꢂꢊ.
Tyꢈ.
DC - 6
14
max.
Uꢊꢂtꢃ
Ghz
dB
fꢄꢁquꢁꢊcy raꢊgꢁ
Gaꢂꢊ
11
Gaꢂꢊ fꢉatꢊꢁꢃꢃ
0.5
2
dB
Gaꢂꢊ Vaꢄꢂatꢂꢅꢊ ovꢁꢄ Tꢁꢇꢈꢁꢄatuꢄꢁ
iꢊꢈut rꢁtuꢄꢊ lꢅꢃꢃ
dB/ °C
dB
13
outꢈut rꢁtuꢄꢊ lꢅꢃꢃ
18
dB
outꢈut pꢅꢆꢁꢄ ꢋꢅꢄ 1 dB Cꢅꢇꢈꢄꢁꢃꢃꢂꢅꢊ (p1dB)
satuꢄatꢁd outꢈut pꢅꢆꢁꢄ (pꢃat)
outꢈut Tꢀꢂꢄd oꢄdꢁꢄ iꢊtꢁꢄcꢁꢈt (ip3)
nꢅꢂꢃꢁ fꢂguꢄꢁ
29
dBꢇ
dBꢇ
dBꢇ
dB
30
41
5
suꢈꢈꢉy Cuꢄꢄꢁꢊt (idd)
400
ꢇA
* Adjust Vgg1 between -2V to 0V to achieve Idd= 400mA typical.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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