Datasheet > HMC637ALP5

HMC637ALP5

更新时间： 2023-12-20 18:46:19

品牌	Logo	应用领域
亚德诺 - ADI		放大器功率放大器
页数	文件大小	规格书
11页	262K
描述
GaAs、pHEMT、MMIC、1 W功率放大器，0.1 GHz至6 GHz

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HMC637ALP5 数据手册

GaAs, pHEMT, MMIC,

1 W Power Amplifier, 0.1 GHz to 6 GHz

Data Sheet

HMC637ALP5E

FEATURES

FUNCTIONAL BLOCK DIAGRAM

P1dB output power: 29 dBm

Gain: 13 dB

Output IP3: 44 dBm

50 Ω matched input/output

32-lead, 5 mm × 5 mm LFCSP package: 25 mm²

NIC

GND

HMC637ALP5E

GG2

NIC

GND

RFIN

NIC

RFOUT/V

NIC

APPLICATIONS

Telecom infrastructure

Microwave radio

NIC

Very small aperture terminal (VSAT)

Military and space

Test instrumentation

Fiber optics

NIC = NO INTERNAL CONNECTION

Figure 1.

GENERAL DESCRIPTION

The HMC637ALP5E is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT) distributed power

amplifier which operates between 0.1 GHz and 6 GHz. The

amplifier provides 13 dB of gain, 44 dBm output third-order

intercept (IP3), and 29 dBm of output power at 1 dB gain

compression while requiring 400 mA from a 12 V supply. Gain

flatness is 0.75 dB from 100 MHz to 6 GHz making the

HMC637ALP5E ideal for electronic warfare (EW), electronic

counter-measure (ECM), radar and test equipment applications.

The HMC637ALP5E amplifier radio frequency (RF) I/Os are

internally matched to 50 Ω, and the 5 mm × 5 mm lead frame

chip scale package (LFCSP) is compatible with high volume

surface-mount technology (SMT) assembly equipment.

Rev. C

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