5秒后页面跳转
HMC636ST89 PDF预览

HMC636ST89

更新时间: 2024-01-25 01:52:47
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器
页数 文件大小 规格书
6页 231K
描述
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz

HMC636ST89 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:TO-243Reach Compliance Code:unknown
风险等级:5.72安装特点:SURFACE MOUNT
功能数量:1端子数量:3
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TO-243
电源:5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:GAASBase Number Matches:1

HMC636ST89 数据手册

 浏览型号HMC636ST89的Datasheet PDF文件第2页浏览型号HMC636ST89的Datasheet PDF文件第3页浏览型号HMC636ST89的Datasheet PDF文件第4页浏览型号HMC636ST89的Datasheet PDF文件第5页浏览型号HMC636ST89的Datasheet PDF文件第6页 
HMC636ST89 / 636ST89E  
v00.1207  
GaAs PHEMT HIGH LINEARITY  
Gain Block, 0.2 - 4.0 GHz  
Typical Applications  
The HMC636ST89(E) is ideal for:  
• Cellular / PCS / 3G  
Features  
Low Noise Figure: 2.2 dB  
High P1dB Output Power: +22 dBm  
High Output IP3: +40 dBm  
Gain: 13 dB  
• WiMAX, WiBro, & Fixed Wireless  
• CATV & Cable Modem  
• Microwave Radio  
50 Ohm I/O’s - No External Matching  
Industry Standard SOT89 Package  
General Description  
Functional Diagram  
The HMC636ST89(E) is a GaAs PHEMT, High  
Linearity, Low Noise, Wideband Gain Block Amplifier  
covering 0.2 to 4.0 GHz. Packaged in an industry  
standard SOT89, the amplifier can be used as either  
a cascadable 50 Ohm gain stage, a PA Pre-Driver, a  
Low Noise Amplifier, or a Gain Block with up to +23  
dBm output power. This versatile Gain Block Amplifier  
is powered from a single +5V supply and requires no  
external matching components The internally matched  
topology makes this amplifier compatible with virtually  
any PCB material or thickness.  
6
Electrical Specifications, Vs= 5.0 V, TA = +25° C  
Parameter  
Frequency Range  
Min  
Typ.  
0.2 - 2.0  
13  
Max  
0.02  
Min.  
5
Typ.  
2.0 - 4.0  
10  
Max.  
0.02  
Units  
GHz  
dB  
Gain  
10  
Gain Variation Over Temperature  
Input Return Loss  
0.01  
10  
0.01  
10  
dB/ °C  
dB  
Output Return Loss  
13  
15  
dB  
Reverse Isolation  
22  
20  
dBm  
dB  
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept (IP3)  
Noise Figure  
19  
36  
22  
20  
36  
23  
39  
39  
dBm  
dB  
2.5  
2
Supply Current (Icq)  
155  
155  
mA  
Note: Data taken with broadband bias tee on device output.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
6 - 326  

与HMC636ST89相关器件

型号 品牌 描述 获取价格 数据表
HMC636ST89_11 HITTITE GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz

获取价格

HMC636ST89E ADI High IP3 SMT Amplifier, 0.2 - 4.0 GHz

获取价格

HMC636ST89E HITTITE GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz

获取价格

HMC636ST89ETR HITTITE Wide Band Low Power Amplifier, 200MHz Min, 4000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, PLAS

获取价格

HMC636ST89ETR ADI High IP3 SMT Amplifier, 0.2 - 4.0 GHz

获取价格

HMC636ST89TR ADI High IP3 SMT Amplifier, 0.2 - 4.0 GHz

获取价格