Datasheet > HMC635LC4TR

HMC635LC4TR

更新时间： 2024-09-30 21:02:23

品牌	Logo	应用领域
HITTITE		射频微波
页数	文件大小	规格书
6页	330K
描述
Wide Band Low Power Amplifier, 1 Func, GAAS,

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技术参数
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HMC635LC4TR 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LCC24,.16SQ,20	Reach Compliance Code：	unknown
风险等级：	5.67	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	24
最高工作温度：	70 °C	最低工作温度：	-55 °C
封装主体材料：	CERAMIC	封装等效代码：	LCC24,.16SQ,20
电源：	5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	表面贴装：	YES
技术：	GAAS	Base Number Matches：	1

HMC635LC4TR 数据手册

HMC635LC4

v01.0514

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 18 - 40 GHz

Typical Applications

The HMC635LC4 is ideal for:

• Point-to-Point Radios

Features

Gain: 18.5 dB ^[2]

P1dB: +22 dBm ^[2]

• Point-to-Multi-Point Radios & VSAT

• LO Driver for Mixers

Output IP3: +27 dBm

Saturated Power: +23.5 dBm @ 15% PAE ^[2]

Supply Voltage: +5V @ 280 mA

50 Ohm Matched Input/Output

24 Lead Ceramic 4x4mm SMT Package: 16mm²

• Military & Space

Functional Diagram

General Description

The HMC635LC4 is a GaAs PHEMT MMIC Driver

Ampliﬁer die which operates between 18 and 40

GHz. The ampliﬁer provides 18.5 dB of gain, +27

dBm Output IP3, and +22 dBm of output power at 1

dB gain compression, while requiring 280 mA from a

+5V supply. Ideal as a driver ampliﬁer for microwave

radio applications, or as an LO driver for mixers

operating between 18 and 40 GHz, the HMC635LC4

is capable of providing up to +23.5 dBm of saturated

output power at 15% PAE. The ampliﬁer’s I/Os are DC

blocked and internally matched to 50 Ohms making it

ideal for integration into Multi-Chip-Modules (MCMs).

Electrical Speciﬁcations

T_A= +25° C, Vdd= Vdd1, 2, 3, 4 = +5V, Idd= Idd1 + Idd2 + Idd3 + Idd4 = 280mA ^[1]

Parameter

Min.

Typ.

18 - 36

18.5

0.045

Max.

Min.

Typ.

36 - 40

17.5

0.045

Max.

0.06

Units

GHz

Frequency Range

Gain ^[2]

Gain Variation Over Temperature

Input Return Loss

0.06

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB) ^[2]

Saturated Output Power (Psat) ^[2]

Output Third Order Intercept (IP3)

Noise Figure ^[2]

dBm

23.5

21.5

Total Supply Current (Idd1 + Idd2 + Idd3 + Idd4)

280

[1] Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical.

[2] Board loss subtracted out for gain, power and noise ﬁgure measurements.

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

12 3 4 5 6

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与HMC635LC4TR相关器件

型号	品牌	获取价格	描述	数据表
HMC636	ADI	获取价格	高IP3 SMT放大器，0.2 - 4.0 GHz
HMC636ST89	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz
HMC636ST89	HITTITE	获取价格	GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
HMC636ST89_11	HITTITE	获取价格	GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
HMC636ST89E	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz
HMC636ST89E	HITTITE	获取价格	GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
HMC636ST89ETR	HITTITE	获取价格	Wide Band Low Power Amplifier, 200MHz Min, 4000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, PLAS
HMC636ST89ETR	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz
HMC636ST89TR	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz
HMC637	HITTITE	获取价格	GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz

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