Datasheet > HMC635LC4TR

HMC635LC4TR

更新时间： 2024-11-25 14:51:03

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
6页	384K
描述
HMC635LC4TR

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HMC635LC4TR 数据手册

HMC635LC4

v01.0514

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 18 - 40 GHz

Typical Applications

The HMC635LC4 is ideal for:

• Point-to-Point Radios

Features

Gain: 18.5 dB ^[2]

P1dB: +22 dBm ^[2]

• Point-to-Multi-Point Radios & VSAT

• LO Driver for Mixers

Output IP3: +27 dBm

Saturated Power: +23.5 dBm @ 15% PAE ^[2]

Supply Voltage: +5V @ 280 mA

50 Ohm Matched Input/Output

24 Lead Ceramic 4x4mm SMT Package: 16mm²

• Military & Space

Functional Diagram

General Description

The HMC635LC4 is a GaAs PHEMT MMIC Driver

Ampliﬁer die which operates between 18 and 40

GHz. The ampliﬁer provides 18.5 dB of gain, +27

dBm Output IP3, and +22 dBm of output power at 1

dB gain compression, while requiring 280 mA from a

+5V supply. Ideal as a driver ampliﬁer for microwave

radio applications, or as an LO driver for mixers

operating between 18 and 40 GHz, the HMC635LC4

is capable of providing up to +23.5 dBm of saturated

output power at 15% PAE. The ampliﬁer’s I/Os are DC

blocked and internally matched to 50 Ohms making it

ideal for integration into Multi-Chip-Modules (MCMs).

Electrical Speciﬁcations

T_A= +25° C, Vdd= Vdd1, 2, 3, 4 = +5V, Idd= Idd1 + Idd2 + Idd3 + Idd4 = 280mA ^[1]

Parameter

Min.

Typ.

18 - 36

18.5

0.045

Max.

Min.

Typ.

36 - 40

17.5

0.045

Max.

0.06

Units

GHz

Frequency Range

Gain ^[2]

Gain Variation Over Temperature

Input Return Loss

0.06

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB) ^[2]

Saturated Output Power (Psat) ^[2]

Output Third Order Intercept (IP3)

Noise Figure ^[2]

dBm

23.5

21.5

Total Supply Current (Idd1 + Idd2 + Idd3 + Idd4)

280

[1] Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical.

[2] Board loss subtracted out for gain, power and noise ﬁgure measurements.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

rights of third parties that may result from its use. Specifications subject to change without notice. No

_{license is granted by implic}P_ah_tioo_nn_ore_o:_th9_er7_w8_ise-2_un5_d0_er-_a3_ny3_p4_a3_{tent or}F_paa_tex_n:_{t r}9_ig7_ht8_s-_o2_{f A}5_n0_alo-_g3_D3_e7_vi3_ces.Order On-line at www.hittite.com

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Application Support: Phone: 978-250-3343 or apps@hittite.com

12 3 4 5 6

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与HMC635LC4TR相关器件

型号	品牌	获取价格	描述	数据表
HMC636	ADI	获取价格	高IP3 SMT放大器，0.2 - 4.0 GHz
HMC636ST89	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz
HMC636ST89	HITTITE	获取价格	GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
HMC636ST89_11	HITTITE	获取价格	GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
HMC636ST89E	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz
HMC636ST89E	HITTITE	获取价格	GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
HMC636ST89ETR	HITTITE	获取价格	Wide Band Low Power Amplifier, 200MHz Min, 4000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, PLAS
HMC636ST89ETR	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz
HMC636ST89TR	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz
HMC637	HITTITE	获取价格	GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz

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