Datasheet > HMC635LC4TR

HMC635LC4TR

更新时间： 2024-02-10 09:31:25

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
6页	384K
描述
HMC635LC4TR

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技术参数
数据手册

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HMC635LC4TR 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LCC24,.16SQ,20	Reach Compliance Code：	unknown
风险等级：	5.67	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	24
最高工作温度：	70 °C	最低工作温度：	-55 °C
封装主体材料：	CERAMIC	封装等效代码：	LCC24,.16SQ,20
电源：	5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	表面贴装：	YES
技术：	GAAS	Base Number Matches：	1

HMC635LC4TR 数据手册

HMC635LC4

v01.0514

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 18 - 40 GHz

Power Compression @ 30 GHz ^[1]

Power Compression @ 40 GHz ^[1]

Pout (dBm)

Gain (dB)

PAE (%)

Pout (dBm)

Gain (dB)

PAE (%)

-15

-10

-5

-15

-10

-5

INPUT POWER (dBm)

Output IP3 vs. Temperature

Noise Figure vs. Temperature ^[1]

+25 C

-40 C

+25 C

-40 C

FREQUENCY (GHz)

Gain & Power vs.

Supply Voltage @ 30 GHz ^[1]

Reverse Isolation vs. Temperature

-10

+25C

- 40C

-20

Gain

P1dB

Psat

-30

-40

-50

-60

-70

4.5

4.7

4.9

5.1

5.3

5.5

Vdd (V)

FREQUENCY (GHz)

[1] Board loss subtracted out for gain, power and noise ﬁgure measurements.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

rights of third parties that may result from its use. Specifications subject to change without notice. No

_{license is granted by implic}P_ah_tioo_nn_ore_o:_th9_er7_w8_ise-2_un5_d0_er-_a3_ny3_p4_a3_{tent or}F_paa_tex_n:_{t r}9_ig7_ht8_s-_o2_{f A}5_n0_alo-_g3_D3_e7_vi3_ces.Order On-line at www.hittite.com

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

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