Datasheet > HMC637ALP5E

HMC637ALP5E

更新时间： 2024-11-21 19:49:23

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
8页	406K
描述
HMC637ALP5E

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HMC637ALP5E 数据手册

HMC637ALP5E

v01.0914

GaAs pHEMT MMIC 1 WATT

POWER AMPLIFIER, DC - 6 GHz

Typical Applications

Features

The HMC637ALP5E wideband PA is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military & Space

P1dB Output Power: +29 dBm

Gain: 13 dB

Output IP3: +44 dBm

50 Ohm Matched Input/Output

32 Lead 5x5mm Lead SMT Package: 25 mm²

• Test Instrumentation

• Fiber Optics

Functional Diagram

General Description

The HMC637ALP5E is

a GaAs MMIC pHEMT

Distributed Power Ampliﬁer which operates bet-

ween DC and 6 GHz. The ampliﬁer provides 13 dB

of gain, +44 dBm output IP3 and +29 dBm of output

power at 1 dB gain compression while requiring 400

mA from a +12V supply. Gain ﬂatness is excellent at

0.75 dB from DC - 6 GHz making the HMC637ALP5E

ideal for EW, ECM, Radar and test equipment

applications. The HMC637ALP5E ampliﬁer I/Os

are internally matched to 50 Ohms and the 5x5 mm

QFN package is compatible with high volume SMT

assembly equipment.

Electrical Speciﬁcations, T_A= +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA^[1]

Parameter

Frequency

DC - 6.0 GHz

Min.

Typ.

Max.

Units

Gain

Gain Flatness

0.75

0.015

Gain Variation Over Temperature

Input Return Loss

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (OIP3)^[2]

dBm

DC - 2.0 GHz

2.0 - 6.0 GHz

Noise Figure

Supply Current (Idd)

320

400

480

[1] Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.

[2] Two-Tone Output Power = +10 dBm Each Tone, 1 MHz Spacing.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

rights of third parties that may result from its use. Specifications subject to change without notice. No

_{license is granted by implic}P_ah_tioo_nn_ore_o:_th9_er7_w8_ise-2_un5_d0_er-_a3_ny3_p4_a3_{tent or}F_paa_tex_n:_{t r}9_ig7_ht8_s-_o2_{f A}5_n0_alo-_g3_D3_e7_vi3_ces.Order On-line at www.hittite.com

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Application Support: Phone: 978-250-3343 or apps@hittite.com

12 3 4 5 6 7 8

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与HMC637ALP5E相关器件

型号	品牌	获取价格	描述	数据表
HMC637BPM5E	ADI	获取价格	GaAs、pHEMT、MMIC、单正电源、DC至6 GHz、1 W功率放大器
HMC637BPM5ETR	ADI	获取价格	HMC637BPM5ETR
HMC637LP5	HITTITE	获取价格	GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
HMC637LP5E	HITTITE	获取价格	GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
HMC637LP5ETR	HITTITE	获取价格	暂无描述
HMC6380	ADI	获取价格	宽带 MMIC VCO，带有缓冲放大器 8.0 - 16.0 GHz
HMC639	ADI	获取价格	高IP3、低噪声放大器，0.2 - 4.0 GHz
HMC639ST89	ADI	获取价格	200MHz - 4000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SOT-89, 3 PIN
HMC639ST89E	HITTITE	获取价格	Wide Band Low Power Amplifier, 200MHz Min, 4000MHz Max, ROHS COMPLIANT, PLASTIC, SOT-89, 3
HMC639ST89E	ADI	获取价格	High IP3, Low Noise Amplifier, 0.2 - 4.0 GHz

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