Datasheet > HMC637A-Die

HMC637A-Die

更新时间： 2024-11-22 14:57:35

品牌	Logo	应用领域
亚德诺 - ADI		放大器功率放大器
页数	文件大小	规格书
8页	368K
描述
GaAs MMIC 1 W功率放大器，DC - 6 GHz

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HMC637A-Die 数据手册

HMC637A

v01.0715

GaAs MMIC 1 WATT

POWER AMPLIFIER DC - 6 GHz

Typical Applications

Features

The HMC637A is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military & Space

P1dB Output Power: +30.5 dBm

Gain: 14 dB

Output IP3: +41 dBm

Bias Supplies: +12V, +6V, -1V

50 Ohm Matched Input/Output

Die Size: 2.98 x 2.48 x 0.1 mm

• Test Instrumentation

• Fiber Optics

Functional Diagram

General Description

The HMC637A is a GaAs MMIC MESFET Distributed

Power Ampliﬁer die which operates between DC and

6 GHz. The ampliﬁer provides 14 dB of gain,

+41 dBm output IP3 and +30.5 dBm of output power

at 1 dB gain compression while requiring 400mA

from a +12V supply. Gain ﬂatness is excellent at 0.5

dB from DC to 6 GHz making the HMC637A ideal for

EW, ECM, Radar and test equipment applications.

The HMC637A ampliﬁer I/Os are internally matched

to 50 Ohms facilitating integration into Mutli-Chip-

Modules (MCMs). All data is taken with the chip

connected via two 0.025mm (1 mil) wire bonds of

minimal length 0.31 mm (12 mils).

Electrical Speciﬁcations, T_A= +25° C, Vdd= +12V, Vgg2= +6V, Idd= 400mA^[1]

Parameter

Frequency

DC - 6.0 GHz

Min.

Typ.

Max.

Units

Gain

Gain Flatness

0.5

Gain Variation Over Temperature

Input Return Loss

0.008

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

30.5

31.5

dBm

[2]

DC - 6.0 GHz

dBm

Output Third Order Intercept (IP3)

DC - 2 GHz

2.0 - 6.0 GHz

Noise Figure

Supply Current (Idd)

400

[1]

Adjust Vgg1 between -2V to 0V to achieve Idd= 400mA typical.

Two-Tone Output Power = 0dBm Per Tone , 1 MHz Spacing.

[2]

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

rights of third parties that may result from its use. Specifications subject to change without notice. No

Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

Application Support: Phone: 978-250-3343 or apps@hittite.com

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与HMC637A-Die相关器件

型号	品牌	获取价格	描述	数据表
HMC637ALP5	ADI	获取价格	GaAs、pHEMT、MMIC、1 W功率放大器，0.1 GHz至6 GHz
HMC637ALP5E	ADI	获取价格	HMC637ALP5E
HMC637BPM5E	ADI	获取价格	GaAs、pHEMT、MMIC、单正电源、DC至6 GHz、1 W功率放大器
HMC637BPM5ETR	ADI	获取价格	HMC637BPM5ETR
HMC637LP5	HITTITE	获取价格	GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
HMC637LP5E	HITTITE	获取价格	GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
HMC637LP5ETR	HITTITE	获取价格	暂无描述
HMC6380	ADI	获取价格	宽带 MMIC VCO，带有缓冲放大器 8.0 - 16.0 GHz
HMC639	ADI	获取价格	高IP3、低噪声放大器，0.2 - 4.0 GHz
HMC639ST89	ADI	获取价格	200MHz - 4000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SOT-89, 3 PIN

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