Datasheet > HMC635-Die

HMC635-Die

更新时间： 2024-11-22 14:57:59

品牌	Logo	应用领域
亚德诺 - ADI		放大器驱动
页数	文件大小	规格书
8页	400K
描述
驱动放大器芯片，18 - 40 GHz

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HMC635-Die 数据手册

HMC635

v00.1107

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 18 - 40 GHz

Typical Applications

The HMC635 is ideal for:

• Point-to-Point Radios

Features

Gain: 19.5 dB

P1dB: +23 dBm

• Point-to-Multi-Point Radios & VSAT

• LO Driver for Mixers

Output IP3: +29 dBm

Saturated Power: +24 dBm @ 15% PAE

Supply Voltage: +5V @ 280 mA

50 Ohm Matched Input/Output

Die Size: 1.95 x 0.84 x 0.10 mm

• Military & Space

Functional Diagram

General Description

The HMC635 is a GaAs PHEMT MMIC Driver

Ampliﬁer die which operates between 18 and 40 GHz.

The ampliﬁer provides 19.5 dB of gain, +29 dBm

Output IP3, and +23 dBm of output power at 1 dB

gain compression, while requiring 280 mA from a +5V

supply. Ideal as a driver ampliﬁer for microwave radio

applications, or as an LO driver for mixers operating

between 18 and 40 GHz, the HMC635 is capable of

providing up to +24 dBm of saturated output power at

15% PAE. The ampliﬁer’s I/Os are DC blocked and

internally matched to 50 Ohms making it ideal for

integration into Multi-Chip-Modules (MCMs). All data

is taken with die connected at input and output RF

ports via two 1 mil wedge bonds of 500μm length.

Electrical Speciﬁcations, T_A= +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA ^[1]

Parameter

Min.

Typ.

18 - 36

19.5

0.045

Max.

Min.

Typ.

36 - 40

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

0.060

0.045

0.050

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

Supply Current (Idd1 + Idd2 + Idd3 + Idd4)

280

[1]Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders, please co^Fn^ota^rc^prt^icH^e,it^dti^et^le^iveM^ry,ic^arⁿo^dw^toav^pe^lacC^eo^or^rdp^eo^rsr^:a^Atiⁿo^an^lo:^{g Devices, Inc.,}

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

rights of third parties that may result from its use. Specifications subject to change without notice. No

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2 - 58

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与HMC635-Die相关器件

型号	品牌	获取价格	描述	数据表
HMC635LC4	HITTITE	获取价格	GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz
HMC635LC4	ADI	获取价格	HMC635LC4
HMC635LC4_10	HITTITE	获取价格	GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz
HMC635LC4TR	HITTITE	获取价格	Wide Band Low Power Amplifier, 1 Func, GAAS,
HMC635LC4TR	ADI	获取价格	HMC635LC4TR
HMC636	ADI	获取价格	高IP3 SMT放大器，0.2 - 4.0 GHz
HMC636ST89	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz
HMC636ST89	HITTITE	获取价格	GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
HMC636ST89_11	HITTITE	获取价格	GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
HMC636ST89E	ADI	获取价格	High IP3 SMT Amplifier, 0.2 - 4.0 GHz

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