Datasheet > HMC635-Die

HMC635-Die

更新时间： 2023-12-20 18:45:20

品牌	Logo	应用领域
亚德诺 - ADI		放大器驱动
页数	文件大小	规格书
8页	400K
描述
驱动放大器芯片，18 - 40 GHz

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HMC635-Die 数据手册

HMC635

v00.1107

GaAs PHEMT MMIC DRIVER

AMPLIFIER, 18 - 40 GHz

Typical Supply Current vs. Vdd

Absolute Maximum Ratings

Drain Bias Voltage

(Vdd1, Vdd2, Vdd3, Vdd4)

Vdd (V)

4.5

Idd (mA)

277

+5.5 Vdc

-3 to 0 Vdc

Gate Bias Voltage (Vgg1,Vgg2)

RF Input Power (RFIN)(Vdd = +5 Vdc)

Channel Temperature

5.0

280

15 dBm

175 °C

5.5

286

Note: Ampliﬁer will operate over full voltage ranges shown above

Continuous Pdiss (T= 85 °C)

(derate 16.16 mW/°C above 85 °C)

1.45 W

Thermal Resistance

(channel to die bottom)

61.87 °C/W

Storage Temperature

Operating Temperature

-65 to +150 °C

-55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

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