是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
风险等级: | 5.27 | 其他特性: | LOW CONDUCTION LOSS |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 35 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE |
最大降落时间(tf): | 140 ns | 门极发射器阈值电压最大值: | 6.8 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 198 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 15 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 330 ns |
标称接通时间 (ton): | 32 ns |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
HGT1S10N120BNS9A | ETC | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
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HGT1S10N120BNST | FAIRCHILD | 35A, 1200V, NPT Series N-Channel IGBT |
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HGT1S10N120BNST | ONSEMI | IGBT,1200V,NPT |
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HGT1S10N120CNS | RENESAS | Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, TO-263AB |
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HGT1S11N120CNS | FAIRCHILD | 43A, 1200V, NPT Series N-Channel IGBT |
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HGT1S11N120CNS | INTERSIL | 43A, 1200V, NPT Series N-Channel IGBT |
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