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HGT1S10N120BNS PDF预览

HGT1S10N120BNS

更新时间: 2024-01-09 23:11:02
品牌 Logo 应用领域
安森美 - ONSEMI 电动机控制瞄准线双极性晶体管
页数 文件大小 规格书
10页 296K
描述
IGBT,1200V,NPT

HGT1S10N120BNS 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:5.27其他特性:LOW CONDUCTION LOSS
外壳连接:COLLECTOR最大集电极电流 (IC):35 A
集电极-发射极最大电压:1200 V配置:SINGLE
最大降落时间(tf):140 ns门极发射器阈值电压最大值:6.8 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):198 W
认证状态:Not Qualified最大上升时间(tr):15 ns
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):330 ns
标称接通时间 (ton):32 ns

HGT1S10N120BNS 数据手册

 浏览型号HGT1S10N120BNS的Datasheet PDF文件第4页浏览型号HGT1S10N120BNS的Datasheet PDF文件第5页浏览型号HGT1S10N120BNS的Datasheet PDF文件第6页浏览型号HGT1S10N120BNS的Datasheet PDF文件第8页浏览型号HGT1S10N120BNS的Datasheet PDF文件第9页浏览型号HGT1S10N120BNS的Datasheet PDF文件第10页 
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS  
Typical Performance Curves Unless Otherwise Specified (Continued)  
4
3
2
1
0
15  
12  
9
o
DUTY CYCLE <0.5%, T = 110 C  
C
PULSE DURATION = 250µs  
FREQUENCY = 1MHz  
V
= 15V  
C
GE  
IES  
V
= 10V  
GE  
6
3
C
OES  
C
RES  
0
0
5
10  
15  
20  
25  
0
1
2
3
4
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
V
, COLLECTOR TO EMITTER VOLTAGE (V)  
CE  
CE  
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER  
VOLTAGE  
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE  
0
10  
0.5  
0.2  
0.1  
-1  
10  
0.05  
t
1
0.02  
0.01  
DUTY FACTOR, D = t / t  
P
1
2
D
PEAK T = (P X Z  
X R  
) + T  
θJC C  
J
D
θJC  
t
2
SINGLE PULSE  
-2  
10  
-5  
-4  
10  
-3  
-2  
-1  
0
10  
10  
10  
10  
10  
t , RECTANGULAR PULSE DURATION (s)  
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE  
Test Circuit and Waveforms  
HGTG10N120BND  
90%  
OFF  
10%  
V
GE  
E
ON2  
E
L = 2mH  
V
CE  
R
= 10Ω  
G
90%  
10%  
d(OFF)I  
+
I
CE  
t
t
V
= 960V  
rI  
DD  
t
fI  
-
t
d(ON)I  
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT  
FIGURE 19. SWITCHING TEST WAVEFORMS  
©2002 Fairchild Semiconductor Corporation  
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1  

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