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FS50R06YE3

更新时间： 2024-11-14 10:24:43
品牌 Logo 应用领域
EUPEC 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
8页 310K
描述
IGBT-modules

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中文翻译

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FS50R06YE3 技术参数

生命周期：Transferred包装说明：MODULE-23
Reach Compliance Code：unknown风险等级：5.56
Is Samacsys：N外壳连接：ISOLATED
最大集电极电流 (IC)：60 A集电极-发射极最大电压：600 V
配置：COMPLEXJESD-30 代码：R-XUFM-X23
元件数量：6端子数量：23
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子形式：UNSPECIFIED端子位置：UPPER
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：265 ns标称接通时间 (ton)：43 ns
Base Number Matches：1

FS50R06YE3 数据手册

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Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FS50R06YE3  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
600  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 65°C, TÝÎ = 175°C  
T† = 25°C, TÝÎ = 175°C  
I† ÒÓÑ  
I†  
50  
60  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
100  
160  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 175°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 50 A, V•Š = 15 V  
I† = 50 A, V•Š = 15 V  
I† = 50 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C V†Š ÙÈÚ  
TÝÎ = 150°C  
1,45 1,90  
1,60  
1,70  
V
V
V
Gate-Schwellenspannung  
gate threshold voltage  
I† = 0,80 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
V•ŠÚÌ  
Q•  
4,9  
5,8  
0,50  
0,0  
6,5  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
CØþÙ  
I†Š»  
I•Š»  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
3,10  
0,095  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
1,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 50 A, V†Š = 300 V  
V•Š = ±15 V  
R•ÓÒ = 8,2 Â  
TÝÎ = 25°C  
tÁ ÓÒ  
0,023  
0,023  
0,023  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 50 A, V†Š = 300 V  
V•Š = ±15 V  
R•ÓÒ = 8,2 Â  
TÝÎ = 25°C  
tØ  
0,015  
0,018  
0,02  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 50 A, V†Š = 300 V  
V•Š = ±15 V  
R•ÓËË = 8,2 Â  
TÝÎ = 25°C  
tÁ ÓËË  
0,18  
0,20  
0,205  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 50 A, V†Š = 300 V  
V•Š = ±15 V  
R•ÓËË = 8,2 Â  
TÝÎ = 25°C  
tË  
0,055  
0,06  
0,06  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 50 A, V†Š = 300 V  
V•Š = ±15 V, L» = 50 nH  
R•ÓÒ = 8,2 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
TÝÎ = 150°C  
0,30  
0,34  
0,43  
mJ  
mJ  
mJ  
EÓÒ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 50 A, V†Š = 300 V  
V•Š = ±15 V, L» = 50 nH  
R•ÓËË = 8,2 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
TÝÎ = 150°C  
1,30  
1,60  
1,70  
mJ  
mJ  
mJ  
EÓËË  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 360 V  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
t« ù 8 µs, TÝÎ = 25°C  
t« ù 6 µs, TÝÎ = 150°C  
350  
250  
A
A
I»†  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
RÚ̆™  
0,85 0,95 K/W  
0,50 K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Peter Kanschat  
approved by: Ralf Keggenhoff  
date of publication: 2005-2-14  
revision: 2.0  
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中文翻译

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