Datasheet > FS50R12KT4_B11

FS50R12KT4_B11

更新时间： 2024-11-14 10:24:43

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
8页	312K
描述
EconoPACK2 module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode

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FS50R12KT4_B11 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FS50R12KT4_B11

EconoPACK™2 Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode

EconoPACK™2 module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

I† ÒÓÑ

I†ç¢

PÚÓÚ

1200

Kollektor-Dauergleichstrom

T† = 95°C, TÝÎ = 175°C

DC-collector current

Periodischer Kollektor Spitzenstrom

t« = 1 ms

100

280

+/-20

repetitive peak collector current

Gesamt-Verlustleistung

T† = 25°C, TÝÎ = 175°C

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 50 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C V†Š ÙÈÚ

TÝÎ = 150°C

1,85 2,15

2,15

2,25

Gate-Schwellenspannung

gate threshold voltage

I† = 1,60 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

V•ŠÚÌ

Q•

5,2

5,8

0,38

4,0

6,4

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

2,80

0,10

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

1,0 mA

100 nA

Gate-Emitter Reststrom

gate-emitter leakage current

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 50 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 15 Â

TÝÎ = 25°C

tÁ ÓÒ

0,13

0,15

µs

TÝÎ = 125°C

TÝÎ = 150°C

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 50 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 15 Â

TÝÎ = 25°C

tØ

0,02

0,03

0,035

µs

TÝÎ = 125°C

TÝÎ = 150°C

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 50 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 15 Â

TÝÎ = 25°C

tÁ ÓËË

0,30

0,38

0,40

µs

TÝÎ = 125°C

TÝÎ = 150°C

Fallzeit (induktive Last)

fall time (inductive load)

I† = 50 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 15 Â

TÝÎ = 25°C

tË

0,045

0,08

0,09

µs

TÝÎ = 125°C

TÝÎ = 150°C

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 50 A, V†Š = 600 V, L» = 25 nH TÝÎ = 25°C

V•Š = ±15 V, di/dt = 1300 A/µs (TÝÎ=150°C) TÝÎ = 125°C

4,50

6,40

7,40

EÓÒ

EÓËË

R•ÓÒ = 15 Â

TÝÎ = 150°C

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 50 A, V†Š = 600 V, L» = 25 nH TÝÎ = 25°C

V•Š = ±15 V, du/dt = 3800 V/µs (TÝÎ=150°C) TÝÎ = 125°C

2,50

4,10

4,50

R•ÓËË = 15 Â

TÝÎ = 150°C

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 800 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

t« ù 10 µs, TÝÎ = 150°C

180

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

RÚÌœ†

RÚÌ†™

0,54 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

0,20

K/W

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Christoph Messelke

approved by: Robert Severin

date of publication: 2008-05-15

revision: 2.0

12 3 4 5 6 7 8

中文翻译

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与FS50R12KT4_B11相关器件

型号	品牌	获取价格	描述	数据表
FS50R12KT4_B15	INFINEON	获取价格	EconoPACK2 module with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
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FS50R12KT4P_B11	INFINEON	获取价格	TIM
FS50R12KT4PB11BPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-25
FS50R12N2T7_B15	INFINEON	获取价格	Solder pin
FS50R12W1T7	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
FS50R12W1T7_B11	INFINEON	获取价格	PressFIT
FS50R12W2T4	INFINEON	获取价格	EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
FS50R12W2T4_B11	INFINEON	获取价格	EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT /
FS50R12W2T4B11BOMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33

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