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FS50R17KE3_B17 PDF预览

FS50R17KE3_B17

更新时间: 2024-11-14 10:24:43
品牌 Logo 应用领域
EUPEC 晶体晶体管双极性晶体管局域网
页数 文件大小 规格书
8页 285K
描述
IGBT-modules

FS50R17KE3_B17 技术参数

生命周期:Transferred包装说明:MODULE-19
Reach Compliance Code:unknown风险等级:5.68
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):82 A集电极-发射极最大电压:1700 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 代码:R-XUFM-X19
元件数量:6端子数量:19
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管元件材料:SILICON标称断开时间 (toff):1100 ns
标称接通时间 (ton):450 nsBase Number Matches:1

FS50R17KE3_B17 数据手册

 浏览型号FS50R17KE3_B17的Datasheet PDF文件第2页浏览型号FS50R17KE3_B17的Datasheet PDF文件第3页浏览型号FS50R17KE3_B17的Datasheet PDF文件第4页浏览型号FS50R17KE3_B17的Datasheet PDF文件第5页浏览型号FS50R17KE3_B17的Datasheet PDF文件第6页浏览型号FS50R17KE3_B17的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FS50R17KE3_B17  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
chstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1700  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 150°C  
T† = 25°C, TÝÎ = 150°C  
I† ÒÓÑ  
I†  
50  
82  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
100  
345  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 150°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 50 A, V•Š = 15 V  
I† = 50 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
2,00 2,45  
2,40  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 2,00 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
5,2  
5,8  
0,60  
9,5  
6,4  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
4,50  
0,15  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
CØþÙ  
I†Š»  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
1,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
I•Š»  
tÁ ÓÒ  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 50 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 8,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,37  
0,40  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 50 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 8,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,04  
0,05  
µs  
µs  
tØ  
tÁ ÓËË  
tË  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 50 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 8,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,65  
0,80  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 50 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 8,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,18  
0,30  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 50 A, V†Š = 900 V, L» = 30 nH  
V•Š = ±15 V, di/dt = 1200 A/µs (TÝÎ=125°C) TÝÎ = 125°C  
R•ÓÒ = 8,0 Â  
TÝÎ = 25°C  
11,0  
16,0  
mJ  
mJ  
EÓÒ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 50 A, V†Š = 900 V, L» = 30 nH  
V•Š = ±15 V, du/dt = 3500 V/µs (TÝÎ=125°C) TÝÎ = 125°C  
R•ÓËË = 8,0 Â  
TÝÎ = 25°C  
10,5  
15,5  
mJ  
mJ  
EÓËË  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 1000 V  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
t« ù 10 µs, TÝÎ = 125°C  
200  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
RÚ̆™  
0,36 K/W  
K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
0,19  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Martin Wölz  
date of publication: 2006-3-2  
revision: 2.0  
approved by: Robert Severin  
1

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