Technische Information / technical information
IGBT-Module
IGBT-modules
FS50R17KE3_B17
IGBT-Wechselrichter / IGBT-inverter
Vorläufige Daten / preliminary data
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1700
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C, TÝÎ = 150°C
T† = 25°C, TÝÎ = 150°C
I† ÒÓÑ
I†
50
82
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
I†ç¢
PÚÓÚ
100
345
A
W
V
Gesamt-Verlustleistung
total power dissipation
T† = 25°C, TÝÎ = 150°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 50 A, V•Š = 15 V
I† = 50 A, V•Š = 15 V
TÝÎ = 25°C
TÝÎ = 125°C
2,00 2,45
2,40
V
V
V†Š ÙÈÚ
V•ŠÚÌ
Q•
Gate-Schwellenspannung
gate threshold voltage
I† = 2,00 mA, V†Š = V•Š, TÝÎ = 25°C
V•Š = -15 V ... +15 V
5,2
5,8
0,60
9,5
6,4
V
µC
Â
Gateladung
gate charge
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
4,50
0,15
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
CØþÙ
I†Š»
Kollektor-Emitter Reststrom
collector-emitter cut-off current
1,0
Gate-Emitter Reststrom
gate-emitter leakage current
I•Š»
tÁ ÓÒ
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 50 A, V†Š = 900 V
V•Š = ±15 V
R•ÓÒ = 8,0 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,37
0,40
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 50 A, V†Š = 900 V
V•Š = ±15 V
R•ÓÒ = 8,0 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,04
0,05
µs
µs
tØ
tÁ ÓËË
tË
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 50 A, V†Š = 900 V
V•Š = ±15 V
R•ÓËË = 8,0 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,65
0,80
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 50 A, V†Š = 900 V
V•Š = ±15 V
R•ÓËË = 8,0 Â
TÝÎ = 25°C
TÝÎ = 125°C
0,18
0,30
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 50 A, V†Š = 900 V, L» = 30 nH
V•Š = ±15 V, di/dt = 1200 A/µs (TÝÎ=125°C) TÝÎ = 125°C
R•ÓÒ = 8,0 Â
TÝÎ = 25°C
11,0
16,0
mJ
mJ
EÓÒ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 50 A, V†Š = 900 V, L» = 30 nH
V•Š = ±15 V, du/dt = 3500 V/µs (TÝÎ=125°C) TÝÎ = 125°C
R•ÓËË = 8,0 Â
TÝÎ = 25°C
10,5
15,5
mJ
mJ
EÓËË
Kurzschlussverhalten
SC data
V•Š ù 15 V, V†† = 1000 V
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
t« ù 10 µs, TÝÎ = 125°C
200
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
0,36 K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
0,19
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Martin Wölz
date of publication: 2006-3-2
revision: 2.0
approved by: Robert Severin
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