是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 2.13 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS50R12KT4PB11BPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-25 | |
FS50R12N2T7_B15 | INFINEON |
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Solder pin | |
FS50R12W1T7 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FS50R12W1T7_B11 | INFINEON |
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PressFIT | |
FS50R12W2T4 | INFINEON |
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EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC | |
FS50R12W2T4_B11 | INFINEON |
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EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / | |
FS50R12W2T4B11BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 | |
FS50R12W2T4BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 | |
FS50R12W2T7 | INFINEON |
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EasyPACK??2B 1200 V,?50 A 六单元?IGBT模块,采用TRENCH | |
FS50R12W2T7_B11 | INFINEON |
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PressFIT |